Diodes AZ4580 Manuel d'utilisateur Page 6

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6
Jan. 2013 Rev. 2. 3 BCD Semiconductor Manufacturing Limited
Data Sheet
DUAL LOW NOISE OPERATIONAL AMPLIFIERS AZ4580
Operating Conditions: V
CC
=+15V, V
EE
=- 15V, T
A
=25
o
C unless otherwise specified.
Parameter Conditions Min Typ Max Unit
Supply Current no load 4 7 mA
Input Offset Voltage
R
S
10KΩ
0.5 3 mV
Input Offset Current
V
CM
=0V
5 100 nA
Input Bias Current
V
CM
=0V
150 500 nA
Input Common Mode Voltage Range
±12 ±13.5
V
Common Mode Rejection Ratio
V
CM
=0V to V
CC
-1.5V, R
S
10KΩ
80 110 dB
Large Signal Voltage Gain
R
L
=2KΩ, V
O
=±10V
90 110 dB
Power Supply Rejection Ratio
R
S
10KΩ
80 110 dB
Output Sink Current
V-=1V, V+=0V, V
O
=2V
80
mA
Output Source Current
V+=1V, V-=0V, V
O
=2V
45
mA
Slew Rate
R
L
2KΩ
7
V/
μS
Gain Bandwidth Product
R
L
=2KΩ, f=10KHz
15
MHz
Total Harmonic Distortion
A
V
=20dB, V
O
=5V
R
L
=2KΩ, f=1KHz
0.0005
%
Equivalent Input Noise Voltage
RIAA R
S
=50Ω, 30KHz LPF
0.7
μV
RMS
Thermal Resistance
(Junction to Case)
DIP-8
43
o
C/W
SOIC-8
63
Electrical Characteristics
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