Diodes AP2152A Manuel d'utilisateur télécharger pdf (Page 4)

AP2142A/ AP2152A

Document number: DS32191 Rev. 3 - 2

4 of 16

www.diodes.com

March 2013

AP2142A/ AP2152A

Electrical Characteristics (@T

= +25°C, V

= +5.0V, unless otherwise specified.)

Symbol Parameter Test Conditions (Note 5) Min Typ Max Unit

UVLO

Input UVLO 1.6 2.0 2.4 V

SHDN

Input Shutdown Current

Disabled, I

OUT

= 0

0.1 1 µA

Input Quiescent Current, Dual

Enabled, I

OUT

= 0

115 180 µA

LEAK

Input Leakage Current Disabled, OUT grounded 1 µA

REV

Reverse Leakage Current

Disabled, V

= 0V, V

OUT

= 5V, I

REV

at V

0.01 0.1 µA

DS(ON)

Switch On-Resistance

= 5V, I

OUT

= 0.5A,

= +25°C

SO-8 90 110

m

MSOP-8EP,

U-DFN3030-8

85 105

= 5V, I

OUT

= 0.5A, -40°C  T

 +85°C

135

= 3.3V, I

OUT

= 0.5A,

= +25°C

SO-8 110 130

MSOP-8EP,

U-DFN3030-8

105 125

= 3.3V, I

OUT

= 0.5A, -40°C  T

 +85°C

170

LIMIT

Over-Load Current Limit

= 5V, V

OUT

= 4V, C

= 4.7µF -40°C  T

 +85°C

0.55 0.7 0.85 A

LIMIT_G

Ganged Over-Load Current Limit

= 5V, V

OUT

= 4V, OUT1 &

OUT2 tied together, C

= 4.7µF

-40°C  T

 +85°C

1.1 1.4 1.7 A

Trig

Current Limiting Trigger Threshold

Output Current Slew rate (<100A/s), C

= 4.7µF

1.0 A

Trig_G

Ganged Current Limiting Trigger

Threshold

OUT1 & OUT2 tied together, Output Current Slew rate

(<100A/s), C

= 4.7µF

1.0 A

Short-Circuit Current per Channel

OUTx connected to ground, device enabled into short

circuit, C

= 4.7µF

0.7 A

OS_G

Ganged Short-Circuit Current

OUT1 & OUT2 connected to ground, device enabled into

short-circuit, C

= 4.7µF

1.1 1.4 1.7 A

SHORT

Short-Circuit Response Time

OUT

= 0V to I

OUT

= I

LIMIT

(output shorted to ground)

2 µs

EN Input Logic Low Voltage

= 2.7V to 5.5V

0.8 V

EN Input Logic High Voltage

= 2.7V to 5.5V

2 V

SINK

EN Input Leakage

= 0V to 5.5V

1 µA

LEAK-O

Output Leakage Current

Disabled, V

OUT

= 0V

0.5 1 µA

Output Turn-On Rise Time

= 1µF, R

LOAD

= 10

0.6 1.5 ms

Output Turn-Off Fall Time

= 1µF, R

LOAD

= 10

0.05 0.3 ms

D(ON)

Output Turn-On Delay Time

= 100µF, R

LOAD

= 10

0.2 0.5 ms

D(OFF)

Output Turn-Off Delay Time

= 100µF, R

LOAD

= 10

0.1 0.3 ms

FLG

FLG Output FET On-Resistance

FLG

= 10mA

20 40 

FOH

FLG Off Current

FLG

= 5V

0.01 1 µA

Blank

FLG Blanking Time

=4.7µF

4 7 15 ms

DIS

Discharge Resistance (Note 6)

= 5V, disabled, I

OUT

=1mA

100 

SHDN

Thermal Shutdown Threshold

Enabled, R

LOAD

=1k

140

C

HYS

Thermal Shutdown Hysteresis 25

C



Thermal Resistance Junction-to-Ambient

SO-8 (Note 7) 115

°C/W

MSOP-8EP (Note 8) 75

U-DFN3030-8 (Note 8) 60

Notes: 5. Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.

6. The discharge function is active when the device is disabled (when enable is de-asserted or during power-up / power-down when V

< V

UVLO

). The

discharge function offers a resistive discharge path for the external storage capacitor for limited time.

7. Test condition for SO-8: Device mounted on FR-4 substrate PCB with minimum recommended pad layout.

8. Test condition for MSOP-8EP and U-DFN3030-8: Device mounted on 2” x 2” FR-4 substrate PCB, 2oz copper, with minimum recommended pad on top

layer and thermal vias to bottom layer ground plane.

1 2 3 4 5 6 7 8 9 ... 15 16

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Diodes AP2152A Manuel d'utilisateur Page 4

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