Diodes AF15N50 Manuel d'utilisateur télécharger pdf (Page 5)

Data Sheet

50V N-Channel MOSFET AF15N50

Aug. 2013 Rev. 1. 0

BCD Semiconductor Manufacturing Limited

5

Electrical Characteristics (Continued)

T

C

=25°C, unless otherwise specified.

Dynamic Characteristics

Parameters Symbol Conditions Min Typ Max Unit

Input Capacitance C

iss

V

GS

=0V, V

DS

=18V,

f=1MHz

1350

pF

V

GS

=0V, V

DS

=25V,

f=1MHz

1316

Output Capacitance C

oss

V

GS

=0V, V

DS

=18V,

f=1MHz

110

pF

V

GS

=0V, V

DS

=25V,

f=1MHz

97

Reverse Transfer

Capacitance

C

rss

V

GS

=0V, V

DS

=18V,

f=1MHz

95

pF

V

GS

=0V, V

DS

=25V,

f=1MHz

85

Turn-on Delay Time t

d(on)

V

GS

=10V, I

D

=15A,

V

DD

=25V, R

G

=6

4.162

ns

Rise Time t

r

14.85

Turn-off Delay Time t

d(off)

35.452

Fall Time t

f

31.108

Gate to Source Charge Q

gs

V

GS

=0V to 10V,

V

DD

=25V, I

D

=15A

3.2

nC

Gate to Drain Charge

(Miller Charger)

Q

gd

5.7

Total Gate Charge Q

g

15.2

Gate Resistance R

g

0.85



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