Diodes ZXTN619MA Manuel d'utilisateur Page 2

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ZXTN619MA
Document Number DS31892 Rev. 5 - 2
2 of 7
www.diodes.com
January 2011
© Diodes Incorporated
A
Product Line o
f
Diodes Incorporated
ZXTN619MA
Maximum Ratings @T
A
= 25°C unless otherwise specified
Parameter Symbol Limit Unit
Collector-Base Voltage
V
CBO
100
V
Collector-Emitter Voltage
V
CEO
50
Emitter-Base Voltage
V
EBO
7
Peak Pulse Current
I
CM
6
A
Continuous Collector Current
(Note 3)
I
C
4
(Note 4) 4.3
Base Current
I
B
1
Thermal Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation
Linear Derating Factor
(Note 3)
P
D
1.5
12
W
mW/°C
(Note 4)
2.45
19.6
Thermal Resistance, Junction to Ambient
(Note 3)
R
θ
JA
83
°C/W
(Note 4) 51
Thermal Resistance, Junction to Lead (Note 5)
R
θ
JL
16.8
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Notes: 3. For a device surface mounted on 31mm x 31mm (10cm
2
) FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition. The entire exposed collector pad is attached to the heatsink.
4. Same as note (3), except the device is measured at t 5 sec.
5. For a single device, thermal resistance from junction to solder-point (at the end of the drain lead).
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