Diodes DMN3115UDM Manuel d'utilisateur télécharger pdf (Page 2)

DMN3115UDM

Document number: DS31187 Rev. 8 - 2

2 of 5

www.diodes.com

November 2013

DMN3115UDM

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Units

Drain-Source Voltage

DSS

30 V

Gate-Source Voltage

GSS

±8 V

Drain Current (Note 6)

3.2 A

Pulsed Drain Current (Note 6)

12.8 A

Thermal Characteristics

Characteristic Symbol Value Units

Total Power Dissipation (Note 6)

900 mW

Thermal Resistance, Junction to Ambient

θJA

139 °C/W

Operating and Storage Temperature Range

, T

STG

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

DSS

 

= 0V, I

= 100μA

Zero Gate Voltage Drain Current

DSS

 

1 μA

= 30V, V

= 0V

Gate-Source Leakage

GSS

 

5

μA

= 8V, V

= 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

(

)

0.5



1.0 V

= V

, I

= 250μA

Static Drain-Source On-Resistance

DS (ON)



130

mΩ

= 4.5V, I

= 6A

= 2.5V, I

= 2A

= 1.5V, I

= 1.0A

Forward Transfer Admittance



=10V, I

= 6A

Diode Forward Voltage (Note 7)



0.7 1.1 V

= 0V, I

= 2A

DYNAMIC CHARACTERISTICS

Input Capacitance

iss



476



= 15V, V

= 0V

f = 1.0MHz

Output Capacitance

oss



Reverse Transfer Capacitance

rss



Notes: 6. Device mounted on FR-4 PCB, minimum recommended pad layout on 2oz. Copper pads.

7. Short duration pulse test used to minimize self-heating effect.

Fig. 2 Typical Transfer Characteristics

V , GATE SOURCE VOLTAGE (V)

I, D

(A)

T = -55°C

T = 25°C

T = 85°C

T = 150°C

V = 5V

Pulsed

0.5 1 1.5 2

1 2 3 4 5

DMN3115UDM 1

Commentaires sur ces manuels

Pas de commentaire

Diodes DMN3115UDM Manuel d'utilisateur Page 2

Commentaires sur ces manuels

Produits connexes et manuels pour Matériel Diodes DMN3115UDM