Diodes 74AHC1G00 Manuel d'utilisateur télécharger pdf (Page 4)

74AHC1G00

SINGLE 2 INPUT POSITIVE NAND GATE

74AHC1G00

Document number: DS35169 Rev. 1- 2

4 of 8

www.diodes.com

March 2011

NEW PRODUCT

Electrical Characteristics

Symbol Parameter Test Conditions V

25ºC -40ºC to 85ºC -40ºC to 125ºC

Unit

Min Typ. Max Min Max Min Max

High Level

Output Voltage

= -50μA

2V 1.9 2 1.9 1.9

3V 2.9 3 2.9 2.9

4.5V 4.4 4.5 4.4 4.4

= -4mA

3V 2.58

2.48 2.40

= -8mA

4.5V

3.94

3.8 3.70

Low Level

Output Voltage

= 50μA

2V 0.1 0.1 0.1

3V 0.1 0.1 0.1

4.5V 0.1 0.1 0.1

= 4mA

0.36 0.44

0.55

= 8mA

4.5V

0.36 0.44

0.55

Input Current

= 5.5 V or GND

0 to 5.5V

± 0.1 ± 1

± 2 μA

Supply Current

= 5.5V or GND

5.5V

1 10

40 μA

Input

Capacitance

= V

– or

GND

5.5V

2.0

10 10

10 pF

Thermal

Resistance

Junction-to-

Ambient

SOT25

(Note 4)

195

C/W

SOT353 430

Thermal

Resistance

Junction-to-

Case

SOT25

(Note 4)

C/W

SOT353 155

Notes: 4. Test conditions for SOT25, and SOT353: Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout

Switching Characteristics

= 3.3V ± 0.3 (see Figure 1)

Parameter

From

(Input)

(OUTPUT)

25ºC -40ºC to 85ºC -40ºC to 125ºC

Unit

Min Typ. Max Min Max Min Max

A or B Y

=15pF

0.6 4.5 7.9 0.6 9.5 0.6 10.5 ns

=50pF

0.6 6.5 11.4 0.6 13.0 0.6 14.5 ns

= 5V ± 0.5V (see Figure 1)

Parameter

From

(Input)

(OUTPUT)

25ºC -40ºC to 85ºC -40ºC to 125ºC

Unit

Min Typ. Max Min Max Min Max

A or B Y

=15pF

0.6 3.5 5.5 0.6 6.5 0.6 7.0 ns

=50pF

0.6 4.9 7.5 0.6 8.5 0.6 9.5 ns

1 2 3 4 5 6 7 8

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