Diodes 74AHC08 Manuel d'utilisateur télécharger pdf (Page 3)

74AHC08

Document number: DS35341 Rev. 3 - 2

3 of 8

www.diodes.com

January 2013

© Diodes Incorporated

NEW PRODUCT

74AHC08

Recommended Operating Conditions (Note 5) (@T

A

= +25°C, unless otherwise specified.)

Symbol Parameter Conditions Min Max Unit

V

CC

Supply Voltage 2.0 5.5 V

V

I

Input Voltage 0 5.5 V

V

O

Output Voltage 0

V

CC

V

Δt/ΔV Input Transition Rise or Fall Rate

V

CC

= 3.0V to 3.6V

100

ns/V

V

CC

= 4.5V to 5.5V

20

T

A

Operating Free-Air Temperature -40 +125 °C

Note: 5. Unused inputs should be held at V

CC

or Ground.

Electrical Characteristics (@T

A

= +25°C, unless otherwise specified.)

Symbol Parameter Test Conditions

V

CC

T

A

= -40°C to +85°C T

A

= -40°C to +125°C

Unit

Min Max Min Max

V

IH

High-Level Input

Voltage

2.0V

1.5 1.5

V

3.0V

2.1 2.1

5.5V 3.85 3.85

V

IL

Low-Level Input

Voltage

2.0V

0.5 0.5

V

3.0V

0.9 0.9

5.5V

1.65 1.65

V

OH

High-Level Output

Voltage

I

OH

= -50μA

2.0V

1.9 1.9

V

I

OH

= -50μA

3.0V 2.9 2.9

I

OH

= -50μA

4.5V 4.4 4.4

I

OH

= -4mA

3.0V 2.48 2.40

I

OH

= -8mA

4.5V 3.80 3.70

V

OL

Low-Level Output

Voltage

I

OL

= 50μA

2.0V

0.1 0.1

V

I

OL

= 50μA

3.0V 0.1 0.1

I

OL

= 50μA

4.5V 0.1 0.1

I

OL

= 4mA

3.0V 0.44 0.55

I

OL

= 8mA

4.5V

0.44 0.55

I

I

Input Current

V

I

=GND to 5.5V

3.6V ±1 ±2 μA

I

CC

Supply Current

V

I

= GND or V

CC,

I

O

=0

3.6V 20 40 μA

Operating Characteristics

Parameter

Test

Conditions

V

CC

= 2.0V V

CC

= 3.3V V

CC

= 5V

Unit

Typ Typ Typ

C

pd

Power Dissipation

Capacitance per Gate

f = 1 MHz 9.7 11.0 15 pF

C

i

Input Capacitance

V

i

= V

CC

– or GND

4.0 4.0 4.0 pF

1 2 3 4 5 6 7 8

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