Diodes 2DD1664P/Q/R Manuel d'utilisateur télécharger pdf (Page 2)

2DD1664P/Q/R

Document number: DS31143 Rev. 5 - 2

2 of 6

www.diodes.com

July 2012

2DD1664P/Q/

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit

Collector-Base Voltage

CBO

40 V

Collector-Emitter Voltage

CEO

32 V

Emitter-Base Voltage

EBO

6 V

Continuous Collector Current

1 A

Peak Pulse Current (Note 6)

2 A

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 5)

1 W

Thermal Resistance, Junction to Ambient (Note 5)

θJA

125

°C/W

Thermal Resistance, Junction to Leads (Note 7)

θJL

°C/W

Operating and Storage Temperature Range

STG

-55 to +150

°C

Notes: 5. For a device surface mounted on FR-4 PCB with minimum suggested pad layout; high coverage of single sided 1 oz copper, in still air conditions

6. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤ 2%.

7. Thermal resistance from junction to solder-point (at the end of the collector lead).

0.2

0.4

25 50

75 100 125

150

DISSI

(W)

T , AMBIENT TEMPERATURE (°C)

Figure 1. Power Dissipation vs. Ambient Temperature

0.6

0.8

1.0

1 2 3 4 5 6

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