Diodes 2DB1132P/Q/R Manuel d'utilisateur télécharger pdf (Page 4)

2DB1132P/Q/R

Document number: DS31142 Rev: 6 - 2

4 of 6

www.diodes.com

December 2013

2DB1132P/Q/R

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

Collector-Base Breakdown Voltage

CBO

-40

— —

= -50µA

Collector-Emitter Breakdown Voltage (Note 10)

CEO

-32

— —

= -1mA

Emitter-Base Breakdown Voltage

EBO

-5

— —

= -50µA

Collector Cut-off Current

CBO

— —

-0.5 µA

=-20V

Emitter Cut-off Current

EBO

— —

-0.5 µA

= -4V

Static Forward Current Transfer

Ratio (Note 10)

2DB1132P

—

180

—

= -100mA, V

= -3V

2DB1132Q 120 270

2DB1132R 180 390

Collector-Emitter saturation Voltage (Note 10)

(

sat

)

—

-125 -500 mV

=-500mA, I

= -50mA

Transition frequency

—

190 — MHz

= 50mA, V

= -5V,f=30MHz

Output Capacitance

—

12 30 pF

= 0A, V

= -10V,f=1MHz

Notes: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%

Typical Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

0.001 0.01 0.1 1 10

100

T = -55°C

T = 25°C

T = 85°C

T = 150°C

V = -3V

200

300

400

500

T = -55°C

T = 25°C

T = 85°C

T = 150°C

I/I = 10

T = -55°C

T = 25°C

T = 85°C

T = 150°C

V = -3V

1 2 3 4 5 6

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