Diodes ZXMS6004DG Manuel d'utilisateur télécharger pdf

Issue 1 - December 2008 1 www.zetex.com

A Product Line of

Diodes Incorporated

ZXMS6004DG

60V N-channel self protected enhancement mode

Intellifet MOSFET

Summary

Continuous drain source voltage 60 V

On-state resistance 500 mΩ

Nominal load current (V

= 5V) 1.3 A

Clamping energy 490mJ

Description

The ZXMS6004DG is a self protected low side MOSFET with logic level

input. It integrates over-temperature, over-current, over-voltage (active

clamp) and ESD protected logic level functionality. The ZXMS6004DG is

ideal as a general purpose switch driven from 3.3V or 5V

microcontrollers in harsh environments where standard MOSFETs are

not rugged enough.

Features

• Compact high power dissipation package

• Low input current

• Logic Level Input (3.3V and 5V)

• Short circuit protection with auto restart

• Over voltage protection (active clamp)

• Thermal shutdown with auto restart

• Over-current protection

• Input Protection (ESD)

• High continuous current rating

Ordering information

Device Part mark Reel size

(inches)

Tape width

(mm)

Quantity per reel

ZXMS66004DGTA ZXMS

6004D

7 12 embossed 3,000 units

Top view

1 2 3 4 5 6 7 8 9 10

ZXMS6004DG 1
Intellifet MOSFET 1

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Page 1 - Intellifet MOSFET

Issue 1 - December 2008 1 www.zetex.com© Diodes Incorporated, 2008 www.diodes.comA Product Line ofDiodes IncorporatedZXMS6004DG60V N-channel self prot

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ZXMS6004DGIssue 1 - December 2008 10 www.zetex.com© Diodes Incorporated, 2008 www.diodes.comSales officesThe Americas3050 E. Hillcrest DriveWestlake V

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ZXMS6004DGIssue 1 - December 2008 2 www.zetex.com© Diodes Incorporated, 2008 www.diodes.comFunctional block diagramApplication information• Especially

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ZXMS6004DGIssue 1 - December 2008 3 www.zetex.com© Diodes Incorporated, 2008 www.diodes.comAbsolute maximum ratingsThermal resistanceNOTES(a) For a de

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ZXMS6004DGIssue 1 - December 2008 4 www.zetex.com© Diodes Incorporated, 2008 www.diodes.comRecommended operating conditionsThe ZXMS6004DG is optimised

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ZXMS6004DGIssue 1 - December 2008 5 www.zetex.com© Diodes Incorporated, 2008 www.diodes.comElectrical characteristics (at Tamb = 25°C unless otherwise

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ZXMS6004DGIssue 1 - December 2008 6 www.zetex.com© Diodes Incorporated, 2008 www.diodes.comElectrical characteristics - continuedNote:(a) Over-tempera

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ZXMS6004DGIssue 1 - December 2008 9 www.zetex.com© Diodes Incorporated, 2008 www.diodes.comPackage information - SOT223Note: Controlling dimensions ar

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