ZVP4525GSEMICONDUCTORSISSUE 4 - JUNE 20041SUMMARYV(BR)DSS=-250V; RDS(ON)=14V; ID=-265mADESCRIPTIONThis 250V enhancement mode P-channel MOSFET provides
ZVP4525GSEMICONDUCTORSISSUE 4 - JUNE 20042THERMAL RESISTANCEPARAMETER SYMBOL VALUE UNITJunction to ambient(a)RθJA63 °C/WJunction to ambient(b)RθJA26 °
ZVP4525GSEMICONDUCTORSISSUE 4 - JUNE 20043CHARACTERISTICS
ZVP4525GSEMICONDUCTORSISSUE 4 - JUNE 20044ELECTRICAL CHARACTERISTICS (atTamb= 25°C unless otherwise stated)PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDIT
ZVP4525GSEMICONDUCTORSISSUE 4 - JUNE 20045TYPICAL CHARACTERISTICS
ZVP4525GSEMICONDUCTORSISSUE 4 - JUNE 20046CHARACTERISTICS
ZVP4525GSEMICONDUCTORSISSUE 4 - JUNE 20047BasicGateChargeWaveformGate Charge Test CircuitSwitching Time WaveformsSwitching Time Test CircuitChargeQGSQ
ZVP4525GSEMICONDUCTORS8ISSUE 4 - JUNE 2004EuropeZetex GmbHStreitfeldstraße 19D-81673 MünchenGermanyTelefon: (49) 89 45 49 49 0Fax: (49) 89 45 49 49 49
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