Diodes ZTX849 Manuel d'utilisateur télécharger pdf

NPN SILICON PLANAR MEDIUM POWER

HIGH CURRENT TRANSISTOR

ISSUE 2  MARCH 94

FEATURES

* 5 Amps continuous current

* Up to 20 Amps peak current

* Very low saturation voltages

APPLICATIONS

* LCD backlight converter

* Flash gun converters

* Battery powered circuits

* Motor drivers

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

CBO

80 V

Collector-Emitter Voltage V

CEO

30 V

Emitter-Base Voltage V

EBO

Peak Pulse Current I

20 A

Continuous Collector Current I

Practical Power Dissipation* P

totp

1.58 W

Power Dissipation at T

amb

=25°C P

tot

1.2 W

Operating and Storage Temperature Range T

stg

-55 to +200 °C

*The power which can be dissipated assuming the device is mounted in a typical manner on a

P.C.B. with copper equal to 1 inch square minimum

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated)

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base Breakdown

Voltage

(BR)CBO

80 120 V

=100µA

Collector-Emitter Breakdown

Voltag

(BR)CER

80 120 V

IC=1

µA, RB ≤1KΩ

Collector-Emitter Breakdown

Voltage

(BR)CEO

30 40 V I

=10mA*

Emitter-Base Breakdown

Voltage

(BR)EBO

68 V

=100µA

Collector Cut-Off Current I

CBO

µA

=70V

=70V, T

amb

=100°C

Collector Cut-Off Current I

CER

R ≤1KΩ

µA

=70V

=70V, T

amb

=100°C

Emitter Cut-Off Current I

EBO

10 nA V

=6V

Collector-Emitter Saturation

Voltage

CE(sat)

110

180

100

200

220

=0.5A, I

=20mA*

=1A, I

=20mA*

=2A, I

=20mA*

=5A, I

=200mA*

Base-Emitter

Saturation Voltage

BE(sat)

930 1050 mV I

=5A, I

=200mA*

E-Line

TO92 Compatible

ZTX849

3-291

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C)

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Base-Emitter

Turn-On Voltage

BE(on)

850 950 mV IC=5A, V

=1V*

Static Forward

Current Transfer

Ratio

100

200

170

300

=10mA, V

=1V

=1A, V

=1V*

=5A, V

=1V*

=20A, V

=1V*

Transition Frequency f

100 MHz I

=100mA, V

=10V

f=50MHz

Output Capacitance C

obo

75 pF V

=10V, f=1MHz*

Switching Times t

off

630

=1A, I

=100mA

=100mA, V

=10V

*Measured under pulsed conditions. Pulse width=300

µs. Duty cycle ≤2%

THERMAL CHARACTERISTICS

PARAMETER SYMBOL MAX. UNIT

Thermal Resistance: Junction to Ambient

Junction to Case

th(j-amb)

th(j-case)

150

°C/W

ZTX849

-40

2.0

1.0

0.0001

150

100

Derating curve

T -Temperature (°C)

ower

iss

ipa

tion

)

Maximum transient thermal impedance

Pulse Width (seconds)

Thermal Resistance (°C/W)

10 10010.10.01

4.0

3.0

-20 0 20

40 60 80 100 120 200180160140

D=t

Case te

mperatu

Ambien

t t

empe

rat

ure

D.C.

D=0.6

D=0.2

D=0.1

Single Pulse

0.001

D=0.05

3-292

1 2 3

Résumé du contenu

Page 1 - HIGH CURRENT TRANSISTOR

NPN SILICON PLANAR MEDIUM POWERHIGH CURRENT TRANSISTORISSUE 2  MARCH 94FEATURES* 5 Amps continuous current* Up to 20 Amps peak current* Very low satu

Page 2

NPN SILICON PLANAR MEDIUM POWERHIGH CURRENT TRANSISTORISSUE 2  MARCH 94FEATURES* 5 Amps continuous current* Up to 20 Amps peak current* Very low satu

Page 3 - TYPICAL CHARACTERISTICS

0.01 0.1 1 100.400.8TYPICAL CHARACTERISTICS VCE(sat)v IC IC - Collector Current (Amps) VCE(sat) - (Volts)IC - Collector Current (Amps) VBE(sat)v IC I

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