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PNP SILICON PLANAR MEDIUM POWER

HIGH GAIN TRANSISTOR

PROVISIONAL DATASHEET ISSUE 2  SEPTEMBER 94

FEATURES

* 15 Volt V

CEO

* Gain of 200 at I

=2 Amps

* Very low saturation voltage

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

CBO

-20 V

Collector-Emitter Voltage V

CEO

-15 V

Emitter-Base Voltage V

EBO

-5 V

Peak Pulse Current I

-10 A

Continuous Collector Current I

-3 A

Practical Power Dissipation* P

totp

1.5 W

Power Dissipation at T

amb

=25°C

derate above 25°C

tot

5.7

mW/°C

Operating and Storage Temperature Range T

stg

-55 to +200 °C

*The power which can be dissipated assuming the device is mounted in a typical manner on a

P.C.B. with copper equal to 1 inch square minimum

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C)

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base Breakdown

Voltage

(BR)CBO

-20 -30 V

=-100µA

Collector-Emitter Breakdown

Voltage

(BR)CEO

-15 -20 V I

=-10mA*

Emitter-Base Breakdown

Voltage

(BR)EBO

-5 -8.5 V

=-100µA

Collector Cut-Off Current I

CBO

-0.1

-10

µA

=-10V

=-10V, T

amb

=100°C

Emitter Cut-Off Current I

EBO

-0.1

µA

=-4V

Collector-Emitter Saturation

Voltage

CE(sat)

-0.025

-0.25

-0.28

-0.035

-0.32

-0.33

=-0.1A, I

=-2mA*

=-2A, I

=-20mA*

=-3A, I

=-200mA*

Base-Emitter

Saturation Voltage

BE(sat)

-0.85 -1.0 V I

=-2A, I

=-20mA*

Base-Emitter

Turn-On Voltage

BE(on)

-0.8 V IC=-2A, V

=-3V*

Static Forward Current

Transfer Ratio

300

250

200

800 I

=-10mA, V

=-1V*

=-1A, V

=-1V*

=-2A, V

=-1V*

=-10A, V

=-2V*

E-Line

TO92 Compatible

ZTX788A

3-271

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C)

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Transition Frequency f

100 150 MHz I

=-50mA, V

=-5V

f=50MHz

Output Capacitance C

obo

30 60 pF V

=-10V, f=1MHz

Switching Times t

off

500

=-500mA, I

=-50mA

=-50mA, V

=-10V

*Measured under pulsed conditions. Pulse width=300

µs. Duty cycle ≤2%

THERMAL CHARACTERISTICS

PARAMETER SYMBOL MAX. UNIT

Thermal Resistance:Junction to Ambient

Junction to Ambient

Junction to Case

th(j-amb)1

th(j-amb)2



th(j-case)

175

116

°C/W

 Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.

ZTX788A

-40 0.0001

Derating curve

T -Temperature (°C)

ax Po

issipati

(

tts)

Maximum transient thermal impedance

Pulse Width (seconds)

Thermal Resistance (°C/W)

10 10010.10.01-20 0 20

40 60 80 100 120 200180160140

0.001

100

200

D=0.2

D=0.1

Single Pulse

D=0.5

D=t

1.0

0.5

2.0

1.5

Case temperature

2.5

Ambient temperat

ure

D=1 (D.C.)

3-272

1 2

HIGH GAIN TRANSISTOR 1

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Page 1 - HIGH GAIN TRANSISTOR

PNP SILICON PLANAR MEDIUM POWERHIGH GAIN TRANSISTORPROVISIONAL DATASHEET ISSUE 2  SEPTEMBER 94FEATURES* 15 Volt VCEO* Gain of 200 at IC=2 Amps* Very

Page 2

PNP SILICON PLANAR MEDIUM POWERHIGH GAIN TRANSISTORPROVISIONAL DATASHEET ISSUE 2  SEPTEMBER 94FEATURES* 15 Volt VCEO* Gain of 200 at IC=2 Amps* Very

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