Diodes ZHB6790 Manuel d'utilisateur
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SM-8 BIPOLAR TRANSISTOR H-BRIDGE PRELIMINARY DATA SHEET ISSUE B JULY 1997FEATURES* Compact package* Low on state losses* Low drive requirements* Opera
THERMAL CHARACTERISTICS PARAMETER SYMBOL VALUE UNITTotal Power Dissipation at Tamb = 25°C*Any single transistor onQ1 and Q3 on or Q2 and Q4 on e
PNP TRANSISTORSELECTRICAL CHARACTERISTICS (at Tamb = 25°C).PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.Collector-Base BreakdownVoltageV(BR)CBO-50
NPN TRANSISTORSELECTRICAL CHARACTERISTICS (at Tamb = 25°C).PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.Collector-Base BreakdownVoltageV(BR)CBO50
PNP TRANSISTORTYPICAL CHARACTERISTICS VCE(sat)v IC I - Collector Current (Amps) V- (Volts) VCE(sat)v IC I - Collector Current (Amps) V- (Volts)I - C
NPN TRANSISTORTYPICAL CHARACTERISTICSZHB6790 VCE(sat)v IC I - Collector Current (Amps) V- (Volts) VCE(sat)v IC I - Collector Current (Amps) V- (Volt
ZHB6790100m 1001010mVCE - Collector Emitter Voltage (V)Safe Operating Area (Full Copper)110100m1100m 1001010mVCE - Collector Emitter Voltage (V)Safe O
HeEDbe1Lp45°o3c12348765e2AA1Dim Millimetres InchesMin Typ Max Min Typ MaxA 1.7 0.067A1 0.02 0.1 0.0008 0.004b 0.7 0.028 c 0.24 0.
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