Diodes SBR05M100BLP Manuel d'utilisateur

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SBR05M100BLP
Document number: DS31109 Rev. 8 - 2
1 of 4
www.diodes.com
June 2010
© Diodes Incorporated
SBR05M100BLP
SBR is a registered trademark of Diodes Incorporated.
0.5A SBR
®
BRIDGE
SUPER BARRIER RECTIFIER
Features
Ultra Low Leakage Current
Excellent High Temperature Stability
Patented Super Barrier Rectifier Technology
Soft, Fast Switching Capability
150ºC Operating Junction Temperature
Lead Free Finish, RoHS Compliant (Note 1)
“Green” Device (Note 4)
Mechanical Data
Case: DFN3030-4
Case Material: Molded Plastic “Green” Molding Compound,
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu Over Copper Lead Frame,
Solderable per MIL-STD-202, Method 208
Polarity: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.02 grams (approximate)
Maximum Ratings @T
A
= 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
RM
100 V
RMS Reverse Voltage
V
R
(
RMS
)
70 V
Average Rectified Output Current
I
O
500 mA
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load (Per Diode)
I
FSM
8 A
Thermal Characteristics
Characteristic Symbol Typ Max Unit
Power Dissipation (Note 2)
P
D
- 0.56 W
Thermal Resistance Junction to Ambient Air (Note 2)
R
θ
JA
- 222 °C/W
Thermal Resistance Junction to Ambient Air (Note 3)
R
θ
JA
- 149 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150 °C
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 4)
V
(
BR
)
R
100 - - V
I
R
= 250 μA
Forward Voltage (Per Diode)
V
F
-
0.54
0.67
0.56
0.60
0.73
0.63
V
I
F
= 0.25A, T
J
= 25ºC
I
F
= 0.5A, T
J
= 25ºC
I
F
= 0.5A, T
J
= 125ºC
Reverse Current (Note 4) (Per Diode)
I
R
-
0.3
32
25
250
µA
V
R
= 100V, T
J
= 25ºC
V
R
= 100V, T
J
= 125ºC
Notes: 1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied, see EU Directive 2002/95/EC Annex Notes.
2. FR-4 PCB, 2 oz. Copper, minimum recommended pad layout per http://www.diodes.com/datasheets/ap02001.pdf.
3. Polymide PCB, 2 oz. copper; minimum recommended pad layout per http://www.diodes.com/datasheets/ap02001.pdf.
4. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php
5. Short duration pulse test used to minimize self-heating effect.
Top View
Device Schematic
Top View
Pin Confi
g
uration
2
1
3
4
1
2
4
3
N/C
~
~
-
+
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Résumé du contenu

Page 1

SBR05M100BLP Document number: DS31109 Rev. 8 - 2 1 of 4 www.diodes.com June 2010© Diodes Incorporated SBR05M100BLPSBR is a registered trademark of

Page 2 - SBR05M100BLP

SBR05M100BLP Document number: DS31109 Rev. 8 - 2 2 of 4 www.diodes.com June 2010© Diodes Incorporated SBR05M100BLPSBR is a registered trademark of

Page 3 - DFN3030-4

SBR05M100BLP Document number: DS31109 Rev. 8 - 2 3 of 4 www.diodes.com June 2010© Diodes Incorporated SBR05M100BLPSBR is a registered trademark of

Page 4 - Suggested Pad Layout

SBR05M100BLP Document number: DS31109 Rev. 8 - 2 4 of 4 www.diodes.com June 2010© Diodes Incorporated SBR05M100BLPSBR is a registered trademark of

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