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SOT223 PNP SILICON PLANAR

HIGH VOLTAGE TRANSISTOR

ISSUE 3 - NOVEMBER 1995 ✪

COMPLEMENTARY TO FZT493

PARTMARKING DETAIL - FZT593

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

CBO

-120 V

Collector-Emitter Voltage V

CEO

-100 V

Emitter-Base Voltage V

EBO

-5 V

Peak Pulse Current I

-2 A

Continuous Collector Current I

-1 A

Base Current I

-200 mA

Power Dissipation at T

amb

=25°C P

tot

Operating and Storage Temperature Range T

stg

-55 to +150 °C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.

Breakdown Voltages V

(BR)CBO

-120 V

=-100µA

(BR)CEO

-100 V I

=-10mA*

(BR)EBO

-5 V

=-100µA

Collector Cut-Off Current I

CBO

-100 nA V

=-100V

Emitter Cut-Off Current I

EBO

-100 nA V

=-4V

Collector-Emitter Cut-Off Current I

CES

-100 nA V

CES

=-100V

Saturation Voltages V

CE(sat)

-0.2

-0.3

=-250mA,I

=-25mA*

=-500mA I

=-50mA*

BE(sat)

-1.1 V I

=-500mA,I

=-50mA*

Base-Emitter Turn-on Voltage V

BE(on)

-1.0 V I

=-1mA, V

=-5V*

Static Forward Current Transfer

Ratio

100

300

=-1mA, V

=-5V

=-250mA,V

=-5V*

=-500mA, V

=-5V*

=-1A, V

=-5V*

Transition Frequency f

50 MHz I

=-50mA, V

=-10V

f=100MHz

Output Capacitance C

obo

5pFV

=-10V, f=1MHz

*Measured under pulsed conditions. Pulse width=300

µs. Duty cycle ≤ 2%

For typical Characteristics graphs see FMMT593 datasheet

FZT593

3 - 196

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SOT223 PNP SILICON PLANARHIGH VOLTAGE TRANSISTORISSUE 3 - NOVEMBER 1995 ✪COMPLEMENTARY TO FZT493PARTMARKING DETAIL - FZT593ABSOLUTE MAXIMUM RATINGS.PA

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