Diodes FZT1049A Manuel d'utilisateur télécharger pdf

SOT 223 NPN SILICON PLANAR

MEDIUM POWER HIGH GAIN TRANSISTOR

ISSUE 2 - JUNE 2007

FEATURES

CEO

= 25V

* 5 Amp Continuous Current

* 20 Amp Pulse Current

* Low Saturation Voltage

* High Gain

* Extremely Low Equivalent On-resistance; R

CE(sat)

= 50mΩ at 5A

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

CBO

80 V

Collector-Emitter Voltage V

CEO 25

Emitter-

Base Voltage V

EBO

Peak Pulse Current I

20 A

Continuous Collector Current I

5 A

Base Current I

500 mA

Power Dissipation at T

amb

=25°C † P

tot

2.5 W

Operating and Storage Temperature

Range

stg

-55 to +150 °C

† The power which can be dissipated assuming the device is mounted in typical manner on a PCB

with copper equal to 2 inches x 2 inches.

FZT1049A

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FZT1049A 1

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Page 1 - FZT1049A

SOT 223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTORISSUE 2 - JUNE 2007FEATURES*VCEO = 25V* 5 Amp Continuous Current* 20 Amp Pulse Current* L

Page 2

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.Collector-BaseBreakdown VoltageV(B

Page 3

FZT1049A1m 1001m 1001m 100100m 1001001m1m 100IC - Collector Current (A)VCE(sat) v IC01.0VCE(sat) - (V)IC/IB=50IC/IB=100IC/IB=200+25°C-55°ChFE - Typica

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Naviguer en ligne ou télécharger Manuel d'utilisateur pour Matériel Diodes FZT1049A. Diodes FZT1049A User Manual Manuel d'utilisatio

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