Diodes DMP32D4S Manuel d'utilisateur

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DMP32D4S
Document number: DS35822 Rev. 4 - 2
1 of 6
www.diodes.com
November 2013
© Diodes Incorporated
DMP32D4S
ADVANCE INFORMATION
30V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(on)
Max
I
D
Max
@T
A
= +25C
-30V
2.4 @ V
GS
= -10V
-300mA
4 @ V
GS
= -4.5V
-250mA
Description
This MOSFET has been designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Load Switch
Portable Applications
Power Management Functions
Features
Low On-Resistance
ESD Protected Gate to 2kV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Weight: 0.006 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
DMP32D4S-7 SOT23 3,000/Tape & Reel
DMP32D4S-13 SOT23 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2012 2013 2014 2015 2016 2017 2018
Code Z A B C D E F
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
ESD PROTECTED
Top View
Top View
Pin-Out
D
G
S
P32S = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Z = 2012)
M = Month (ex: 9 = September)
Source
Gate
Protection
Diode
Gate
Drain
Equivalent Circuit
SOT23
P32S
YM
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Résumé du contenu

Page 1 - DMP32D4S

DMP32D4S Document number: DS35822 Rev. 4 - 2 1 of 6 www.diodes.com November 2013© Diodes Incorporated DMP32D4SADVANCE INFORMATION 30V P-CHANNEL

Page 2

DMP32D4S Document number: DS35822 Rev. 4 - 2 2 of 6 www.diodes.com November 2013© Diodes Incorporated DMP32D4SADVANCE INFORMATION Maximum Ratin

Page 3 - ADVANCE INFORMATION

DMP32D4S Document number: DS35822 Rev. 4 - 2 3 of 6 www.diodes.com November 2013© Diodes Incorporated DMP32D4SADVANCE INFORMATION 00.51.01.5

Page 4

DMP32D4S Document number: DS35822 Rev. 4 - 2 4 of 6 www.diodes.com November 2013© Diodes Incorporated DMP32D4SADVANCE INFORMATION 0.30.60

Page 5

DMP32D4S Document number: DS35822 Rev. 4 - 2 5 of 6 www.diodes.com November 2013© Diodes Incorporated DMP32D4SADVANCE INFORMATION Package Out

Page 6

DMP32D4S Document number: DS35822 Rev. 4 - 2 6 of 6 www.diodes.com November 2013© Diodes Incorporated DMP32D4SADVANCE INFORMATION IMPORTANT N

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