Diodes DMN3150L Manuel d'utilisateur télécharger pdf

DMN3150L

Document number: DS31126 Rev. 9 - 2

1 of 5

www.diodes.com

October 2013

DMN3150L

31N

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features

 Low On-Resistance:

 R

DS(ON)

< 54m @ V

= 10V

 R

DS(ON)

< 72m @ V

= 4.5V

 R

DS(ON)

< 115m @ V

= 2.5V

 Low Gate Threshold Voltage

 Low Input Capacitance

 Fast Switching Speed

 Low Input/Output Leakage

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT-23

 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Finish – Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

 Terminal Connections: See Diagram

 Marking Information: See Page 4

 Ordering Information: See Page 4

 Weight: 0.008 grams (approximate)

Ordering Information (Note 4)

Part Number Case Packaging

DMN3150L-7 SOT-23 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/ products/packages.html

Marking Information

Date Code Key

Year 2009 2010 2011 2012 2013 2014 2015 2016 2017 2018

Code W X Y Z A B C D E F

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

SOT-23

TOP VIEW

Source

EQUIVALENT CIRCUIT

Gate

Drain

Pin Configuration

31N = Product Type Marking Code

YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)

Y M = Date Code Marking for CAT (Chengdu Assembly/ Test site)

Y or Y = Year (ex: A = 2013)

M = Month (ex: 9 = September)

Chengdu A/T Site

Shanghai A/T Site

1 2 3 4 5

DMN3150L 1

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DMN3150L Document number: DS31126 Rev. 9 - 2 1 of 5 www.diodes.com October 2013© Diodes Incorporated DMN3150L31NYM N-CHANNEL ENHANCEMENT MODE FIELD

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DMN3150L Document number: DS31126 Rev. 9 - 2 2 of 5 www.diodes.com October 2013© Diodes Incorporated DMN3150L Maximum Ratings (@TA = +25°C, unles

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DMN3150L Document number: DS31126 Rev. 9 - 2 3 of 5 www.diodes.com October 2013© Diodes Incorporated DMN3150L V , DRAIN-SOURCE VOLTAGE (V)Fig

DMN3150L Document number: DS31126 Rev. 9 - 2 4 of 5 www.diodes.com October 2013© Diodes Incorporated DMN3150L Package Outline Dimensions Pleas

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DMN3150L Document number: DS31126 Rev. 9 - 2 5 of 5 www.diodes.com October 2013© Diodes Incorporated DMN3150L IMPORTANT NOTICE DIODES INCORPORA

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