Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
BV
CBO
50
⎯ ⎯
V
I
C
= 50μA
Collector-Emitter Breakdown Voltage
BV
CEO
50
⎯ ⎯
V
I
C
= 1mA
Emitter-Base Breakdown Voltage
BV
EBO
5
⎯ ⎯
V
I
E
= 50μA
Collector Cutoff Current
I
CBO
⎯ ⎯
0.5
μA
V
CB
= 50V
Emitter Cutoff Current
I
EBO
⎯ ⎯
0.5
μA
V
EB
= 4V
Collector-Emitter Saturation Voltage
V
CE(sat)
⎯ ⎯
0.3 V
I
C/
I
B
= 10mA/1mA DDTC113TUA
I
C/
I
B
= 5mA/0.5mA DDTC123TUA
I
C/
I
B
= 2.5mA/.25mA DDTC143TUA
I
C/
I
B
= 1mA/.1mA DDTC114TUA
I
C/
I
B
= 5mA/0.5mA DDTC124TUA
I
C/
I
B
= 2.5mA/.25mA DDTC144TUA
I
C/
I
B
= 1mA/0.1mA DDTC115TUA
I
C/
I
B
= .5mA/.05mA DDTC125TUA
DC Current Transfer Ratio
h
FE
100 250 600
⎯ I
C
= 1mA, V
CE
= 5V
Input Resistor (R
1
) Tolerance ΔR
1
-30
⎯
+30 %
⎯
Gain-Bandwidth Product*
f
T
⎯
250
⎯
MHz
V
CE
= 10V, I
E
= -5mA,
f = 100MHz
*Transistor - For Reference Only
Typical Curves – DDTC114TUA
-50
050100
250
200
150
50
100
0
T , AMBIENT TEMPERATURE ( C)
Fig. 1 Derating Curve
A
°
150
,
WE
DISSI
A
I
N (MILLIWA
S)
D
0.001
0.01
0.1
1
0
10
20
30
40
50
V , MAXIM
M
LLE
V
L
A
E (V)
CE(SAT)
I , COLLECTOR CURRENT (mA)
Fig. 2 V vs. I
C
CE(SAT) C
I/I = 10
CB
-25 C
°
75 C
°
25 C
°
10
1,000
100
1
110
h, D
100
E
AI
(
MALIZED)
FE
I , COLLECTOR CURRENT (mA)
Fig. 3 DC Current Gain
C
0
1
2
3
4
0
20
30
,
A
A
I
A
E (p
)
OB
V , REVERSE BIAS VOLTAGE (V)
Fig. 4 Output Capacitance
R
10
5
15
25
I = 0mA
E
DS30323 Rev. 7 – 2
2 of 3
www.diodes.com
DDTC (R1-ONLY SERIES) UA
© Diodes Incorporated
Commentaires sur ces manuels