DS30328 Rev. 6 - 2
2 of 3
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DDTA (R2-ONLY SERIES) UA
© Diodes Incorporated
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
BV
CBO
-50
⎯ ⎯
V
I
C
= -50μA
Collector-Emitter Breakdown Voltage
BV
CEO
-50
⎯ ⎯
V
I
C
= -1mA
Emitter-Base Breakdown Voltage
BV
EBO
5
⎯ ⎯
V
I
E
= -720μA, DDTA114GUA
I
E
= -330μA, DDTA124GUA
I
E
= -160μA, DDTA144GUA
I
E
= -72μA, DDTA115GUA
Collector Cutoff Current
I
CBO
⎯ ⎯
-0.5
μA
V
CB
= -50V
Emitter Cutoff Current
DDTA114GUA
DDTA124GUA
DDTA144GUA
DDTA115GUA
I
EBO
-300
-140
-65
-30
⎯
-580
-260
-130
-58
μA
V
EB
= -4V
Collector-Emitter Saturation Voltage
V
CE(sat)
⎯ ⎯
-0.3 V
I
C
= -10mA, I
B
= -0.5mA
DC Current Transfer Ratio
DDTA114GUA
DDTA124GUA
DDTA144GUA
DDTA115GUA
h
FE
30
56
68
82
⎯ ⎯ ⎯
I
C
= -5mA, V
CE
= -5V
Bleeder Resistor (R
2
) Tolerance ΔR
2
-30
⎯
+30 %
⎯
Gain-Bandwidth Product*
f
T
⎯
250
⎯
MHz
V
CE
= -10V, I
E
= 5mA,
f = 100MHz
NEW PRODUCT
* Transistor - For Reference Only
Typical Curves – DDTA114GUA
0
50
100
050100
150
,
WE
DISSI
A
I
(mW)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Derating Curve
A
150
200
250
-50
0.001
0.01
0.1
1
0
10
20
30
40
50
V , MAXIM
M
LLE
V
L
A
E (V)
CE(SAT)
I , COLLECTOR CURRENT (mA)
Fig. 2 V vs. I
C
CE(SAT) C
I/I = 10
CB
-25 C
°
75 C
°
25 C
°
10
1,000
100
110
h, D
100
E
AI
(
MALIZED)
FE
I , COLLECTOR CURRENT (mA)
Fig. 3 DC Current Gain
C
V = 10
CE
0
2
4
6
10
020
30
,
A
A
I
AN
E (p
)
OB
V , REVERSE BIAS VOLTAGE (V)
Fig. 4 Output Capacitance
R
1
10
5
15
25
I = 0V
E
8
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