Diodes D58V0M4U8MR Manuel d'utilisateur télécharger pdf (Page 2)

D58V0M4U8MR

Document number: DS36183 Rev. 2 - 2

2 of 5

www.diodes.com

April 2014

D58V0M4U8MR

NEW PRODUCT

ADVANCED INFORMATION

Maximum Ratings (@T

= +25°C, unless otherwise specified.), Per Element

Characteristic Symbol Value Unit Conditions

Peak Pulse Power Dissipation

2700 W 8/20µs, Per Figure 1

Peak Pulse Current

24 A 8/20µs, Per Figure 1

ESD Protection – Contact Discharge

ESD_Contact

±30 kV IEC 61000-4-2 Standard

ESD Protection – Air Discharge

ESD_Air

±30 kV IEC 61000-4-2 Standard

Thermal Characteristics

Characteristic Symbol Value Unit

Package Power Dissipation (Note 5)

1.0 W

Thermal Resistance, Junction to Ambient (Note 5)

θJA

125 °C/W

Operating and Storage Temperature Range

, T

STG

-65 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Conditions

Reverse Standoff Voltage

RWM

— — 58 V —

Channel Leakage Current (Note 6)

— — 0.2 μA

RWM

= 58V

Breakdown Voltage

64.4 — 71.2 V

= 1mA

Clamping Voltage

— — 100 V

= 24A, t

= 8/20μS

Channel Input Capacitance

— 55 — pF

= 50V, f = 1MHz

Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at

http://www.diodes.com.

6. Short duration pulse test used to minimize self-heating effect.

t, TIME ( s)

Figure 1 Pulse Waveform



20 40

100

Peak Value I

Half Value I /2

8x20 Waveform

as defined by R.E.A.

I , PEAK PULSE CURRENT (%I )

PppP

100

110

0 25 50 75 100 125 150 175

T (°C)

Figure 2 Peak Power Dissipation vs.

Initial

Junction Temperature

(

IAL)/ °

)

PP J PP J

(

IAL

1 2 3 4 5

Commentaires sur ces manuels

Pas de commentaire

Diodes D58V0M4U8MR Manuel d'utilisateur Page 2

Commentaires sur ces manuels

Produits connexes et manuels pour Matériel Diodes D58V0M4U8MR