BC847CDLP
Document number: DS30817 Rev. 7 - 2
4 of 6
www.diodes.com
May 2013
© Diodes Incorporated
BC847CDLP
110100
V,
LLE
-EMI
E
SATURATION VOLTAGE (V)
CE(SAT)
I , COLLECTOR CURRENT (mA)
C
Figure 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
0
0.05
0.10
0.15
0.20
0.25
0.1
0.01
I/I = 10
CB
T = -55°C
A
T = 85°C
A
T = 150°C
A
T = 25°C
A
110100
V , BASE-EMI
E
N-
N V
L
A
E (V)
BE(ON)
I , COLLECTOR CURRENT (mA)
C
Figure 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
0
0.1
0.01
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V = 5V
CE
T = -55°C
A
T = 85°C
A
T = 150°C
A
T = 25°C
A
110100
V , BASE-EMI
E
SA
A
I
N V
L
A
E (V)
BE(SAT)
I , COLLECTOR CURRENT (mA)
C
0
0.1
0.01
0.2
0.4
0.6
0.8
1.0
1.2
I/I = 10
CB
T = 150°C
A
T = -55°C
A
T = 85°C
A
T = 25°C
A
Figure 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
CAPACITANCE (pF)
V , REVERSE VOLTAGE (V)
Figure 7 Typical Capacitance Characteristics
R
0
2
4
6
8
10
12
14
0
5101520
25
C
ibo
C
obo
f = 1MHz
I , COLLECTOR CURRENT (mA)
Figure 8 Typical Gain-Bandwidth Product
vs. Collector Current
C
0
0
50
100
150
200
250
300
10 20
30
40
50 60
70
f,
AI
-BA
DWID
D
(M
z)
T
V = 5V
f = 100MHz
CE
Commentaires sur ces manuels