Diodes B1100LB Manuel d'utilisateur télécharger pdf (Page 2)

B1100LB

Document number: DS30077 Rev. 10 - 2

2 of 4

www.diodes.com

September 2010

B1100LB

Maximum Ratings @T

= 25°C unless otherwise specified

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitance load, derate current by 20%.

Characteristic Symbol Value Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage @ I

= 0.5mA

RRM

RWM

100 V

RMS Reverse Voltage

(

RMS

)

70 V

Average Rectified Output Current @ T

= 120°C

@ T

= 100°C

1.0

2.0

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave Superimposed on Rated Load

FSM

50 A

Thermal Characteristics

Characteristic Symbol Value Unit

Typical Thermal Resistance Junction to Terminal (Note 4)

°C/W

Operating and Storage Temperature Range (Note 5)

STG

-65 to +175

°C

Electrical Characteristics @T

= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

Forward Voltage Drop

- - 0.75 V

= 1.0A, T

= 25°C

Leakage Current (Note 6)

0.5

5.0

= 100V, T

= 25°C

= 100V, T

= 100°C

Total Capacitance

- - 100 pF

= 4V, f = 1MHz

Notes: 4. Valid provided that terminals are kept at ambient temperature.

5. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dP

/dT

< 1/R

θJA

6. Short duration pulse test used to minimize self-heating effect.

0.01

0.1

1.0

0 0.2 0.4 0.6 0.8 1.0

I , INS

ANE

(A)

V , INSTANTANEOUS FORWARD VOLTAGE (V)

Fig. 1 Typical Forward Characteristics

120

160

200

240

10.1 10 100

AL (p

)

V , DC (V)

Fig. 2 Total Capacitance vs. Reverse Voltage

REVERSE VOLTAGE

f = 1.0MHz

T = 25C

280

1 2 3 4

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Diodes B1100LB Manuel d'utilisateur Page 2

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