Diodes APX823/APX824/APX825A Manuel d'utilisateur télécharger pdf (Page 5)

APX823/APX824/APX825A

PROCESSOR SUPERVISORY CIRCUITS

APX823/APX824/APX825A

Document number: DS31323 Rev. 4 - 2

5 of 12

www.diodes.com

May 2011

Electrical Characteristics (cont.)

Symbol Parameter Test Conditions Min Typ. Max Unit

hys

Hysteresis at V

Input

APX823/APX824/APX825A -23

- 50 -

APX823/APX824/APX825A -26

APX823/APX824/APX825A -29

APX823/APX824/APX825A -31

APX823/APX824/APX825A -40

- 50 - APX823/APX824/APX825A -44

APX823/APX824/APX825A -46

Set-up Time

= V

to (V

– 100mV)

20 μs

IH(AV)

Average High-

level Input

Current

WDI

WDI=V

Time average

(dc=88%)

- 120 - μA

IL(AV)

Average Low-

level Input

Current

WDI=0.3V,

=5.5V time

average (dc=12%)

- -15 - μA

High-level Input

Current

WDI

WDI=V

- 120 160 μA

Low-level Input

Current

WDI

WDI=0.3V,

=5.5V

- 120 160 μA

Supply Current

WDI and

Unconnected, Outputs

unconnected

= V

TH-

+0.2V

- 30 40 μA

Internal Pull-up Resistor at MR

- 60 - kΩ

OUT

Temperature Coefficient

50 - ppm/

Input Capacitance at MR, WDI

= 0V to 5.5V

- 5 - pF

Thermal Resistance Junction-to-Ambient

SOT25 (Note 4) 161

C/W

SOT26 (Note 4) 169

Thermal Resistance Junction-to-Case

SOT25 (Note 4) 27

C/W

SOT26 (Note 4) 28

Note: 4. Test condition for SOT25 and SOT26: Devices mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

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Diodes APX823/APX824/APX825A Manuel d'utilisateur Page 5

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