Diodes AP6502A Manuel d'utilisateur télécharger pdf (Page 3)

AP6502A

Document number: DS35812 Rev. 3 - 2

3 of 14

www.diodes.com

December 2012

NEW PRODUCT

P6502A

Absolute Maximum Ratings (Note 4) (@T

= +25°C, unless otherwise specified.)

Symbol Parameter Rating Unit

Supply Voltage

-0.3 to +26

Switch Node Voltage

-1.0 to V

+0.3

Bootstrap Voltage

-0.3 to V

Feedback Voltage -0.3V to +6 V

Enable/UVLO Voltage -0.3V to +6 V

COMP

Comp Voltage -0.3V to +6 V

Storage Temperature -65 to +150 °C

Junction Temperature +150 °C

Lead Temperature +260 °C

ESD Susceptibility (Note 5)

HBM Human Body Model 3 kV

MM Machine Model 250 V

Notes: 4. Stresses greater than the 'Absolute Maximum Ratings' specified above may cause permanent damage to the device. These are stress ratings only;

functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability

may be affected by exposure to absolute maximum rating conditions for extended periods of time.

5. Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when

handling and transporting these devices.

Thermal Resistance (Note 6)

Symbol Parameter Rating Unit



Junction to Ambient SO-8EP 74

°C/W



Junction to Case SO-8EP 16

Note: 6. Test condition: SO-8EP: Device mounted on 1" x 1" FR-4 substrate PC board, 2oz copper, with minimum recommended pad on top layer and

thermal vias to bottom layer ground plane.

Recommended Operating Conditions (Note 7) (@T

= +25°C, unless otherwise specified.)

Symbol Parameter Min Max Unit

Supply Voltage

4.75

23 V

Operating Ambient Temperature Range

-40

+85 °C

Note: 7. The device function is not guaranteed outside of the recommended operating conditions.

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Diodes AP6502A Manuel d'utilisateur Page 3

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