AP2145/ AP2155
Document number: DS32031 Rev. 3 - 2
3 of 13
www.diodes.com
March 2013
© Diodes Incorporated
AP2145/ AP2155
Recommended Operating Conditions (@T
A
= +25°C, unless otherwise specified.)
Symbol Parameter Min Max Unit
V
IN
Input voltage 2.7 5.5 V
I
OUT
Output Current 0 500 mA
V
IL
EN Input Logic Low Voltage 0 0.8 V
V
IH
EN Input Logic High Voltage 2.0
V
IN
V
T
A
Operating Ambient Temperature -40 85
C
Electrical Characteristics (@T
A
= +25°C, V
IN
= +5.0V, unless otherwise specified.)
Symbol Parameter Test Conditions Min Typ. Max Unit
V
UVLO
Input UVLO
R
LOAD
= 1k
1.6 1.9 2.5 V
I
SHDN
Input Shutdown Current Disabled, OUT = open 0.5 1 µA
I
Q
Input Quiescent Current Enabled, OUT = open 45 70 µA
I
LEAK
Input Leakage Current Disabled, OUT grounded -1 1 µA
I
REV
Reverse Leakage Current
Disabled, V
IN
= 0V, V
OUT
= 5V, I
REV
at V
IN
1 µA
R
DS(ON)
Switch On-Resistance
V
IN
= 5V, I
OUT
= 0.5A, -40°C T
A
+85°C
MSOP-8EP 90 140 m
SO-8 95 140 m
V
IN
= 3.3V, I
OUT
= 0.5A, -40°C T
A
+85°C
120 160 m
I
SHORT
Short-Circuit Current Limit
Enabled into short circuit, C
IN
=10µF, C
L
= 100µF
0.7 A
I
LIMIT
Over-Load Current Limit
V
IN
= 5V, V
OUT
= 4.5V, C
IN
=10µF, C
L
= 100µF,
-40°C T
A
+85°C
0.6 0.8 1.0 A
I
TRIG
Current Limiting Trigger Threshold
Output Current Slew rate (<100A/s), C
IN
= 10µF, C
L
= 22µF
1.0 A
T
SHORT
Short-Circuit Response Time
V
OUT
= 0V to I
OUT
= I
LIMIT
(short applied to output),
C
L
= 100µF
10 µs
V
IL
EN Input Logic Low Voltage
V
IN
= 2.7V to 5.5V
0.8 V
V
IH
EN Input Logic High Voltage
V
IN
= 2.7V to 5.5V
2 V
I
SINK
EN Input Leakage
V
EN
= 5V
1 µA
I
O-LEAK
Output Leakage Current Disabled 1 µA
T
D(ON)
Output Turn-On Delay Time
C
L
= 1µF, R
LOAD
= 10
0.05 ms
T
R
Output Turn-On Rise Time
C
L
= 1µF, R
LOAD
= 10
0.6 1.5 ms
T
D(OFF)
Output Turn-Off Delay Time
C
L
= 1µF, R
LOAD
= 10
0.01 ms
T
F
Output Turn-Off Fall Time
C
L
= 1µF, R
LOAD
= 10
0.05 0.1 ms
R
FLG
FLG Output FET On-Resistance
V
IN
= 3.3V or 5V, C
IN
= 10µF, I
FLG
= 10mA
20 40
I
FLG
FLG Leakage Current
V
FLG
= 5V
1 µA
T
BlLANK
FLG Blanking Time
V
IN
= 3.3V or 5V, C
IN
= 10µF, C
L
= 100µF
4 7 15 ms
T
SHDN
Thermal Shutdown Threshold
Enabled, R
LOAD
= 1k
135
C
T
HYS
Thermal Shutdown Hysteresis 25
C
JA
Thermal Resistance Junction-to-
Ambient
SO-8 (Note 5) 110
C/W
MSOP-8EP (Note 6) 60
C/W
Notes: 5. Test condition for SO-8: Device mounted on FR-4, 2oz copper, with minimum recommended pad layout.
6. Test condition for MSOP-8EP: Device mounted on 2” x 2” FR-4 substrate PC board, 2oz copper, with minimum recommended pad on top layer
and thermal vias to bottom layer ground plane.
(11 pages)
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