Diodes AP2112 Manuel d'utilisateur Page 7

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Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2112
Mar. 2013 Rev. 2. 0 BCD Semiconductor Manufacturing Limited
7
Electrical Characteristics (Continued)
AP2112-1.8 Electrical Characteristic (Note 2)
V
IN
=2.8V, C
IN
=1.0μF (Ceramic), C
OUT
=1.0μF (Ceramic), Typical T
A
=25°C, unless otherwise specified (Note 3).
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input
voltage must be applied before a current source load is applied.
Note 3: Production testing at T
A
=25°C. Over temperature specifications guaranteed by design only.
Parameter Symbol Test Conditions Min Typ Max Unit
Output Voltage V
OUT
V
IN
=2.8V, 1mAI
OUT
30mA
V
OUT
*98.5%
1.8
V
OUT
*101.5%
V
Maximum Output Current I
OUT(MAX)
V
IN
=2.8V,
V
OUT
=1.773V to 1.827V
600 mA
Load Regulation
(V
OUT
/V
OUT
)/
I
OUT
V
OUT
=1.8V, V
IN
=V
OUT
+1V,
1mA I
OUT
600mA
-1 0.2 1 %/A
Line Regulation
(V
OUT
/V
OUT
)/
V
IN
2.8VV
IN
6V, I
OUT
=30mA -0.1 0.02 0.1 %/V
Dropout Voltage V
DROP
I
OUT
=10mA 500 700
mV I
OUT
=300mA 500 700
I
OUT
=600mA 500 700
Quiescent Current I
Q
V
IN
=2.8V, I
OUT
=0mA 55 80
μA
Standby Current I
STD
V
IN
=2.8V, V
EN
in OFF mode 0.01 1.0
μA
Power Supply Rejectio
n
Ratio
PSRR
Ripple 0.5Vp-p
V
IN
=2.8V,
I
OUT
=100mA
f=100Hz 65
dB
f=1KHz
65
Output Voltage
Temperature Coefficient
(V
OUT
/V
OUT
)/ T
I
OUT
=30mA
T
A
=-40°C to 85°C
±100 ppm/°C
Short Current Limit I
SHORT
V
OUT
=0V 50 mA
RMS Output Noise V
NOISE
N
o Load, 10Hzf100kHz 50
μV
RMS
V
EN
High Voltage V
IH
Enable logic high, regulator on 1.5 6.0
V
V
EN
Low Voltage V
IL
Enable logic low, regulator off 0 0.4
Start-up Time t
S
N
o Loa
d
20
μs
EN Pull Down Resistor R
PD
3.0
MΩ
V
OUT
Discharge Resistor R
DCHG
Set EN pin at Low 60
Ω
Thermal Shutdown
Temperature
T
OTSD
160
°C
Thermal Shutdown
Hysteresis
T
HYOTSD
25
Thermal Resistance
θ
JC
SOT-23-5 96
°C/WSOIC-8 75
SOT-89-5 47
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