AL8812
Document number: DS37099 Rev. 1 - 2
3 of 11
www.diodes.com
March 2014
© Diodes Incorporated
L8812
Absolute Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Symbol Parameter Value Unit
V
CC
Power Supply Voltage 20 V
V
IR
Comparator Input Voltage Range -0.3 to +36 V
SW/C Switch Collector Voltage 36 V
SW/E
Switch Emitter Voltage (V
Pin
1 = 40V)
36 V
V
CE (switch)
Switch Collector to Emitter Voltage 36 V
DRIVE Driver Collector Voltage 36 V
I
C (driver)
Driver Collector Current (Note 4) 100 mA
I
SW
Switch Current 1.6 A
V
DS
Maximum MOSFET Drain-Source voltage 60 V
V
GS
Maximum MOSFET Gate-Source voltage +/-20 V
I
SOURCE
Maximum Continuous Source (Body Diode) Current 3.7 A
P
D
Continuous Power Dissipation (T
A
= +25°C)
(U-DFN6040-12 (derate 10mW/°C above +25°C)
1000 mW
θ
JA
Junction-to-Ambient Thermal Resistance 47.31
°C/W
θ
JC
Junction-to-Case Thermal Resistance 6.42
°C/W
T
MJ
Maximum Junction Temperature +150
°C
T
OP
Operating Junction Temperature Range
0 to +105
°C
T
stg
Storage Temperature Range -65 to +150
°C
ESD HBM Human Body Model ESD Protection 250 V
ESD MM Machine Model ESD Protection 100 V
Note: 4. Maximum package power dissipation limits must be observed.
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Symbol Characteristics Min Typ Max Unit
OSCILLATOR
f
osc
Frequency (V
PIN
5 = 0V, C
T
= 1.0nF, T
A
= +25°C)
24 33 42 kHz
I
chg
Charge Current (V
CC
= 5.0V to 40V, T
A
= +25°C)
24 30 42 μA
I
dischg
Discharge Current (V
CC
= 5.0V to 40V, T
A
= +25°C)
140 200 260 μA
I
dischg
/ I
chg
Discharge to Charge Current Ratio (Pin 7 to V
CC
, T
A
= +25°C)
5.2 6.5 7.5 —
V
ipk (sense)
Current Limit Sense Voltage (I
chg
= I
dischg
, T
A
= +25°C)
300 400 450 mV
OUTPUT SWITCH (Note 5)
V
CE (sat)
Saturation Voltage, Darlington Connection
(I
SW
= 1.0A, Pins 1,8 connected)
— 1.0 1.3 V
V
CE (sat)
Saturation Voltage, Darlington Connection
(I
SW
= 1.0A, ID = 50mA, Forced ß ≈ 20)
— 0.45 0.7 V
h
FE
DC Current Gain (I
SW
= 1.0A, V
CE
= 5.0V, T
A
= +25°C)
50 75 — —
I
C (off)
Collector Off-State Current (V
CE
= 40V)
- 0.01 100 μA
OUTPUT MOSFET
V
GS(th)
MOSFET Gate Threshold voltage 1 — 2.2 V
V
FD
MOSFET Diodes forward voltage — .85 .95 V
R
DS(ON)
Drain-source on-resistance (VGS = 10V, ID = 2.5A)
Drain-source on-resistance (VGS = 4.5V, ID = 2A)
— —
120
180
mΩ
mΩ
COMPARATOR
V
th
Threshold Voltage
T
A
= +25°C
T
A
= 0
o
C to +70
o
C
— — — V
— 1.225 1.25 1.275 —
— 1.21 — 1.29 —
Reg
line
Threshold Voltage Line Regulation (V
CC
= 3.0V to 40V)
— 1.4 6.0 mV
TOTAL DEVICE
I
CC
Supply Current (V
CC
= 5.0V to 40V, C
T
=1.0nF, Pin 7 = V
CC
, V
Pin 5
> V
th
Pin 2
= Gnd, remaining pins open)
— — 3.5 mA
Note: 5. Low duty cycle pulse techniques are used during test to maintain junction temperature as close to ambient temperature as possible.
(20 pages)
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