Diodes AL8806Q Manuel d'utilisateur télécharger pdf (Page 3)

AL8806Q

Document number: DS36905 Rev. 1 - 2

3 of 13

www.diodes.com

April 2014

L8806Q

Recommended Operating Conditions (@T

= +25°C, unless otherwise specified.)

Symbol Parameter Min Max Unit

Operating Input Voltage relative to GND 6.0 30 V

CTRLH

Voltage High for PWM Dimming Relative to GND 2.6 5.5 V

CTRLDC

Voltage range for 20% to 100% DC Dimming Relative to GND 0.5 2.5 V

CTRLL

Voltage Low for PWM Dimming Relative to GND 0 0.4 V

Maximum Switching Frequency — 1 MHz

Continuous Switch Current — 1.5 A

Junction Temperature Range -40 +125 °C

Electrical Characteristics (@ V

= 12V, T

= +25°C, unless otherwise specified.)

Symbol Parameter Conditions Min Typ. Max Unit

INSU

Internal regulator start up threshold

rising

—

5.9 V

INSH

Internal regulator hysteresis threshold

falling

100

—

300 mV

Quiescent current Output not switching

(Note 5)

—

— 350 µA

Input supply Current CTRL pin floating f = 250kHz

—

1.8 5 mA

Set current Threshold Voltage

CTRL

≥ 2.6V or floating.

95 100 105 mV

TH-H

Set threshold hysteresis — — ±20 — mV

SET

SET pin input current

SET

= V

-0.1

— 16 22 µA

CTRL

CTRL pin input resistance Referred to internal reference — 50 — kΩ

REF

Internal Reference Voltage — — 2.5 — V

DS(on)

On Resistance of SW MOSFET

= 1A

— 0.18 0.35 Ω

SW_Leakage

Switch leakage current

= 30V

— — 0.5 μA

Thermal Resistance Junction-to-

Ambient (Note 6)

(Note 7) — 69 —

°C/W

Thermal Resistance Junction-to-Case

(Note 6)

(Note 7) — 4.3 —

Notes: 5. AL8806Q does not have a low power standby mode but current consumption is reduced when output switch is inhibited: V

SENSE

= 0V. Parameter is tested

with V

CTRL

≤ 2.5V

6. Refer to figure 5 for the device derating curve.

7. Measured on an FR4 51x51mm PCB with 2oz copper standing in still air with minimum recommended pad layout on top layer and thermal vias to bottom

layer maximum area ground plane. For better thermal performance, larger copper pad for heat-sink is needed.

8. Dominant conduction path via exposed pad. Refer to figure 5 for the device derating curve.

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Diodes AL8806Q Manuel d'utilisateur Page 3

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