Diodes AL8806 Manuel d'utilisateur télécharger pdf (Page 3)

AL8806

Document number: DS35144 Rev. 5 - 2

3 of 15

www.diodes.com

July 2013

L8806

Absolute Maximum Ratings (@T

= +25°C, unless otherwise specified.)

Symbol Parameter Ratings Unit

ESD HBM Human Body Model ESD Protection 2.5 kV

ESD MM Machine Model ESD Protection 200 V

Continuous V

pin voltage relative to GND

-0.3 to +40 V

SW voltage relative to GND -0.3 to +40 V

CTRL

CTRL pin input voltage -0.3 to +6 V

SW-RMS

DC or RMS switch current 1.65 A

SW-PK

Peak switch current (<10%) 3 A

Junction Temperature 150 °C

LEAD

Lead Temperature Soldering 300 °C

Storage Temperature Range -65 to +150 °C

Caution: Stresses greater than the 'Absolute Maximum Ratings' specified above, may cause permanent damage to the device. These are stress ratings only;

functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may be

affected by exposure to absolute maximum rating conditions for extended periods of time.

Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when handling

and transporting these devices.

Recommended Operating Conditions (@T

= +25°C, unless otherwise specified.)

Symbol Parameter Min Max Unit

Operating Input Voltage relative to GND 6.0 36 V

CTRLH

Voltage High for PWM dimming relative to GND 2.6 5.5 V

CTRLDC

Voltage range for 20% to 100% DC dimming relative to GND 0.5 2.5 V

CTRLL

Voltage Low for PWM dimming relative to GND 0 0.4 V

DC or RMS switch current 1.5 A

OSC

Switching Frequency 1 MHz

Junction Temperature Range -40 +125 °C

Electrical Characteristics (@V

= 12V, T

= +25°C, unless otherwise specified.)

Symbol Parameter Conditions Min Typ Max Unit

INSU

Internal regulator start up threshold

rising

5.9 V

INSH

Internal regulator hysteresis threshold

falling

100 300 mV

Quiescent current Output not switching

(Note 4) 350 µA

Input supply Current CTRL pin floating f = 250kHz 1.8 5 mA

Set current Threshold Voltage

CTRL

≥ 2.6V or floating.

95 100 105 mV

TH-H

Set threshold hysteresis ±20 mV

SET

SET pin input current

SET

= V

-0.1

16 22 µA

CTRL

CTRL pin input resistance Referred to internal reference 50 kΩ

REF

Internal Reference Voltage 2.5 V

DS(on)

On Resistance of SW MOSFET

= 1A

0.18 0.35 Ω

SW_Leakage

Switch leakage current

=36V

0.5 μA



Thermal Resistance Junction-to-Ambient (Note 5) MSOP-8EP (Note 6) 69

C/W



Thermal Resistance Junction-to-Case (Note 5) MSOP-8EP (Note 6) 4.3

Notes: 4. AL8806 does not have a low power standby mode but current consumption is reduced when output switch is inhibited: V

SENSE

= 0V. Parameter is

tested with V

CTRL

≤ 2.5V

5. Dominant conduction path via exposed pad. Refer to figure 5 for the device derating curve.

6. Measured on an FR4 51x51mm PCB with 2oz copper standing in still air with minimum recommended pad layout on top layer and thermal vias to

bottom layer maximum area ground plane. For better thermal performance, larger copper pad for heat-sink is needed.

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Diodes AL8806 Manuel d'utilisateur Page 3

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