Diodes 74AUP1G09 Manuel d'utilisateur Page 7

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74AUP1G09
Document number: DS35151 Rev. 2 - 2
7 of 14
www.diodes.com
July 2013
© Diodes Incorporated
74AUP1G09
Operating and Package Characteristics (@T
A
= +25°C, unless otherwise specified.)
Parameter
Test
Conditions
V
CC
Typ Unit
C
pd
Power Dissipation
Capacitance
f = 1MHz
No Load
0.8V 6.5
pF
1.2V ± 0.1V 6.3
1.5V ± 0.1V 6.3
1.8V ± 0.15V 6.2
2.5V ± 0.2V 6.2
3.3V ± 0.3V 6.1
C
i
Input Capacitance
V
i
= V
CC
or GND
0V or 3.3V 1.5 pF
θ
JA
Thermal Resistance
Junction-to-Ambient
SOT353
(Note 6)
371
°C/W
X2-DFN0808-4 430
X2-DFN1010-6 445
X2-DFN1409-6 470
X2-DFN1410-6 460
θ
JC
Thermal Resistance
Junction-to-Case
SOT353
(Note 6
143
°C/W
X2-DFN0808-4 240
X2-DFN1010-6 250
X2-DFN1409-6 275
X2-DFN1410-6 265
Note: 6. Test condition for , SOT353, X2-DFN0808-4:, X2-DFN1010-6 X2-DFN1409-6 and X2-DFN1410-6: Device mounted on FR-4 substrate PC board,
2oz copper, with minimum recommended pad layout.
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