Diodes 74AHC1G125 Manuel d'utilisateur télécharger pdf (Page 4)

74AHC1G125

SINGLE BUFFER GATE WITH 3-STATE OUTPUT

74AHC1G125

Document number: DS35176 Rev. 1 - 2

4 of 9

www.diodes.com

March 2011

NEW PRODUCT

Electrical Characteristics

Symbol Parameter Test Conditions V

25ºC -40ºC to 85ºC -40ºC to 125ºC

Unit

Min Typ. Max Min Max Min Max

High Level

Output Voltage

= -50μA

2V 1.9 2 1.9 1.9

3V 2.9 3 2.9 2.9

4.5V 4.4 4.5 4.4 4.4

= -4mA

3V 2.58 2.48 2.40

= -8mA

4.5V 3.94 3.8 3.70

Low Level

Output Voltage

= 50μA

2V 0.1 0.1 0.1

3V 0.1 0.1 0.1

4.5V 0.1 0.1 0.1

= 4mA

3V 0.36 0.44

0.55

= 8mA

4.5V 0.36 0.44

0.55

Input Current

= 5.5V or GND

0 to 5.5V ± 0.1 ± 1

± 2 μA

Z State

Leakage

Current

=0 to 5.5V

5.5V 0.25 2.5 10 μA

Supply Current

= 5.5V or GND

5.5V 1 10

40 μA

Input

Capacitance

= V

– or

GND

5.5V 2.0 10 10

10 pF

Thermal

Resistance

Junction-to-

Ambient

SOT25

(Note 4)

195

C/W

SOT353 430

Thermal

Resistance

Junction-to-

Case

SOT25

(Note 4)

C/W

SOT353 155

Note: 4. Test conditions for SOT25, and SOT353: Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

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Diodes 74AHC1G125 Manuel d'utilisateur Page 4

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