2N7002
Document number: DS11303 Rev. 33 - 2
2 of 5
www.diodes.com
July 2013
© Diodes Incorporated
2N7002
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
60 V
Drain-Gate Voltage R
GS
1.0M V
DGR
60 V
Gate-Source Voltage Continuous
Pulsed
V
GSS
±20
±40
V
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +85°C
T
A
= +100°C
I
D
170
120
105
mA
Continuous Drain Current (Note 7) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +85°C
T
A
= +100°C
I
D
210
150
135
mA
Maximum Body Diode Forward Current (Note 7)
Pulsed
Continuous
I
S
0.5
2
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
I
DM
800 mA
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation
(Note 6)
P
D
370
mW
(Note 7) 540
Thermal Resistance, Junction to Ambient
(Note 6)
R
θJA
348
°C/W
(Note 7) 241
Thermal Resistance, Junction to Case
(Note 7)
R
θJC
91
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
60 70
V
V
GS
= 0V, I
D
= 10µA
Zero Gate Voltage Drain Current @ T
C
= +25°C
@ T
C
= +125°C
I
DSS
1.0
500
µA
V
DS
= 60V, V
GS
= 0V
Gate-Body Leakage
I
GSS
±10 nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS
th
1.0
2.5 V
V
DS
= V
GS
, I
D
= 250µA
Static Drain-Source On-Resistance @ T
J
= +25°C
@ T
J
= +25°C
@ T
J
= +125°C
R
DS(ON)
3.2
4.4
7.5
5.0
13.5
V
GS
= 5.0V, I
D
= 0.05A
V
GS
= 10V, I
D
= 0.5A
V
GS
= 10V, I
D
= 0.5A
On-State Drain Current
I
D
ON
0.5 1.0
A
V
GS
= 10V, V
DS
= 7.5V
Forward Transconductance
g
FS
80
mS
V
DS
=10V, I
D
= 0.2A
Diode Forward Voltage
V
SD
0.78 1.5 V
V
GS
= 0V, I
S
= 115mA
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
22 50 pF
V
DS
= 25V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
11 25 pF
Reverse Transfer Capacitance
C
rss
2.0 5.0 pF
Gate resistance
R
g
120
Ω
V
DS
= 0V, V
GS
= 0V,
f = 1.0MHz
Total Gate Charge (V
GS
= 4.5V) Q
223
pC
V
DS
= 10V, I
D
= 250mA
Gate-Source Charge
Q
s
82
Gate-Drain Charge
Q
d
178
SWITCHING CHARACTERISTICS (Note 9)
Turn-On Delay Time
t
D
on
2.8
ns
V
DD
= 30V, I
D
= 0.2A,
R
L
= 150, V
GEN
= 10V,
R
GEN
= 25
Turn-On Rise Time
t
3.0
Turn-Off Delay Time
t
D
off
7.6
Turn-Off Fall Time
t
f
5.6
Notes: 6. Device mounted on FR-4 PCB, with minimum recommended pad layout
7. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
(4 pages)
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