Diodes ZXTN25050DFH Manuel d'utilisateur

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Issue 3 - September 2006 1 www.zetex.com
© Zetex Semiconductors plc 2006
ZXTN25050DFH
50V, SOT23, NPN medium power transistor
Summary
BV
CEX
> 150V
BV
CEO
> 50V
BV
ECO
> 5V
I
C(cont)
= 4A
V
CE(sat)
< 60mV @ 1A
R
CE(sat)
= 40m
P
D
= 1.25W
Description
Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium.
Features
High power dissipation SOT23 package
High peak current
•High gain
Low saturation voltage
150V forward blocking voltage
5V reverse blocking voltage
Applications
MOSFET gate drivers
Power switches
Motor control
•DC fans
DC-DC converters
Ordering information
Device marking
017
Device Reel size
(inches)
Tape width
(mm)
Quantity per
reel
ZXTN25050DFHTA 7 8 3,000
C
E
B
C
E
B
Pinout - top view
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Résumé du contenu

Page 1 - ZXTN25050DFH

Issue 3 - September 2006 1 www.zetex.com© Zetex Semiconductors plc 2006ZXTN25050DFH50V, SOT23, NPN medium power transistorSummary BVCEX > 150V BVCE

Page 2

ZXTN25050DFHIssue 3 - September 2006 2 www.zetex.com© Zetex Semiconductors plc 2006Absolute maximum ratingsNOTES:(a) For a device surface mounted on 1

Page 3

ZXTN25050DFHIssue 3 - September 2006 3 www.zetex.com© Zetex Semiconductors plc 2006Characteristics

Page 4

ZXTN25050DFHIssue 3 - September 2006 4 www.zetex.com© Zetex Semiconductors plc 2006Electrical characteristics (at Tamb = 25°C unless otherwise stated)

Page 5

ZXTN25050DFHIssue 3 - September 2006 5 www.zetex.com© Zetex Semiconductors plc 2006Typical characteristics

Page 6

ZXTN25050DFHIssue 3 - September 2006 6 www.zetex.com© Zetex Semiconductors plc 2006For international sales offices visit www.zetex.com/officesZetex pr

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