Diodes DCP68/-25 Manuel d'utilisateur télécharger pdf

DS30797 Rev. 6 - 2

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DCP68/-25

NPN SURFACE MOUNT TRANSISTOR

Features

• Epitaxial Planar Die Construction

• Complementary

PNP Type Available (DCP69)

• Ideally

Suited for Automated Assembly Processes

• Ideal for Medium Pow

er Switching or Amplification Applications

• Lead Free By

Design/RoHS Compliant (Note 1)

• "Green" Dev

ice (Note 2)

Mechanical Data

• Case: SOT-223

• Case Material: Molded Plastic, “Green” Molding Compound.

UL F

lammability Classification Rating 94V-0

• Moisture Sensitivity

: Level 1 per J-STD-020D

• Terminals: Finish - Matte Tin annealed over Copper leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

• Marking Information: See Page 3

• Ordering Information: See Page 3

• Weight: 0.115 grams

OT-223

NEW PRODUCT

2,4

COLLECTOR

BASE

EMITTE

TOP VIEW

Schematic and Pin Configuration

Maximum Ratings @T

= 25°C unless otherwise specified

Characteristic Symbol Value Units

Collector-Base Voltage

CBO

25 V

Collector-Emitter Voltage

CEO

20 V

Emitter-Base Voltage

EBO

5.0 V

Collector Current

1.0 A

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation @ T

= 25ºC (Note 3) P

1 W

Thermal Resistance, Junction to Ambient Air @ T

= 25°C (Note 3)

125

°C/W

Operating and Storage Temperature Range

, T

STG

-55 to 150

°C

Electrical Characteristics @T

= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 4)

Collector-Emitter Breakdown Voltage

(BR)CES

25 — — V

= 100μA, I

= 0

Collector-Emitter Breakdown Voltage

(BR)CEO

20 — — V

= 1.0mA, I

= 0

Collector-Base Breakdown Voltage

(BR)CBO

25 — — V

= 10μA, I

= 0

Emitter-Base Breakdown Voltage

(BR)EBO

5.0 — — V

= 10μA, I

= 0

Collector-Base Cutoff Current

CBO

— — 100 nA

= 25V, I

= 0

Emitter-Base Cutoff Current

EBO

— — 10

μA

= 5.0V, I

= 0

ON CHARACTERISTICS (Note 4)

DCP68, DCP68-25

—

= 10V, I

= 5.0mA

= 1.0V, I

= 1.0A

DCP68 85 — 375

= 1.0V, I

= 500mA

DC Current Gain

DCP68-25

160 — 375

—

= 1.0V, I

= 500mA

Collector-Emitter Saturation Voltage

CE(SAT)

— — 0.5 V

= 1.0A, I

= 100mA

Base-Emitter Turn-On Voltage

BE (ON)

— — 1.0 V

= 1.0V, I

= 1.0A

SMALL SIGNAL CHARACTERISTICS

Current Gain-Bandwidth Product

— 330 — MHz

= 100mA, V

= 5.0V

f = 100MHz

Notes: 1. No purposefully added lead.

2. Diodes Inc.'s "Green" Policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can

be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.

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Résumé du contenu

Page 1 - DCP68/-25

DS30797 Rev. 6 - 2 1 of 4 www.diodes.com DCP68/-25 © Diodes Incorporated DCP68/-25 NPN SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Di

Page 2 - NEW PRODUCT

DS30797 Rev. 6 - 2 2 of 4 www.diodes.com DCP68/-25 © Diodes Incorporated V , COLLECTOR EMITTER VOLTAGE (V)CEI, COLLECTOR CURRENT (A)C0.00.20.4

Page 3 - (Top View)

DS30797 Rev. 6 - 2 3 of 4 www.diodes.com DCP68/-25 © Diodes Incorporated CAPACITANCE (pF)V , REVERSE VOLTAGE (V)R1101000.1 1 10 100 Fig. 8 Typ

Page 4 - Suggested Pad Layout:

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