Diodes BSS84 Manuel d'utilisateur

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BSS84
Document number: DS30149 Rev. 20 - 2
1 of 5
www.diodes.com
August 2013
© Diodes Incorporated
BSS84
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(on) max
I
D
T
A
= +25°C
-50V
10 @ V
GS
= -5V
-130mA
Description
This MOSFET has been designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
General Purpose Interfacing Switch
Power Management Functions
Analog Switch
Features and Benefits
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT23
Case Material: UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish (Lead Free Plating) Solderable per
MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
Ordering Information (Note 4)
Part Number Qualification Case Packaging
BSS84-7-F Commercial SOT23 3000/Tape & Reel
BSS84Q-7-F Automotive SOT23 3000/Tape & Reel
BSS84-13-F Commercial SOT23 10000/Tape & Reel
BSS84Q-13-F Automotive SOT23 10000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
Date Code Key
Year 1998 1999 2000 2001 2002 2003 2004 2011 2012 2013 2014 2015 2016 2017
Code J K L M N P R Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT23
Top View Equivalent Circuit To
p
View
D
G
S
K84 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
= Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Source
Gate
Drain
e3
Shanghai A/T Site
Chengdu A/T Site
Y
Y
M
K84
YM
K84
YM
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Résumé du contenu

Page 1

BSS84 Document number: DS30149 Rev. 20 - 2 1 of 5 www.diodes.com August 2013© Diodes Incorporated BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET Product

Page 2

BSS84 Document number: DS30149 Rev. 20 - 2 2 of 5 www.diodes.com August 2013© Diodes Incorporated BSS84 Maximum Ratings (@TA = +25°C, unless othe

Page 3 - I = -0.13A

BSS84 Document number: DS30149 Rev. 20 - 2 3 of 5 www.diodes.com August 2013© Diodes Incorporated BSS84 05010025 50 75 100125 150175200P, POW

Page 4 - © Diodes Incorporated

BSS84 Document number: DS30149 Rev. 20 - 2 4 of 5 www.diodes.com August 2013© Diodes Incorporated BSS84 Package Outline Dimensions Please see A

Page 5

BSS84 Document number: DS30149 Rev. 20 - 2 5 of 5 www.diodes.com August 2013© Diodes Incorporated BSS84 IMPORTANT NOTICE DIODES INCORPORATED MA

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