Diodes BS870 Manuel d'utilisateur télécharger pdf

BS870

Document number: DS11302 Rev. 18 - 2

1 of 5

www.diodes.com

August 2013

BS870

N-CHANNEL ENHANCEMENT MODE MOSFET

Features

 Low On-Resistance

 Low Gate Threshold Voltage

 Low Input Capacitance

 Fast Switching Speed

 Low Input/Output Leakage

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Notes 3 & 4)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT23

 Case Material: Molded Plastic. UL Flammability Classification

Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminal Connections: See Diagram

 Terminals: Matte Tin Finish annealed over Alloy 42 leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

 Weight: 0.008 grams (approximate)

Ordering Information (Note 5)

Part Number Case Packaging

BS870-7-F SOT23 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. Product manufactured with Date Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date

Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb

Fire Retardants.

5. For packaging details, go to our website at http://www.diodes.com/products/packages.html

Marking Information

Date Code Key

Year 1998 1999 2000 2001 2002 2003 2004 … 2011 2012 2013 2014 2015 2016 2017

Code J K L M N P R … Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

SOT23

Top View Equivalent Circuit

View

K70 = Product Type Marking Code

YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)

= Date Code Marking for CAT (Chengdu Assembly/ Test site)

Y or = Year (ex: A = 2013)

M = Month (ex: 9 = September)

Source

Gate

Drain

Shanghai A/T SiteChengdu A/T Site

K70

1 2 3 4 5

Résumé du contenu

BS870 Document number: DS11302 Rev. 18 - 2 1 of 5 www.diodes.com August 2013© Diodes Incorporated BS870 N-CHANNEL ENHANCEMENT MODE MOSFET Features

Page 2

BS870 Document number: DS11302 Rev. 18 - 2 2 of 5 www.diodes.com August 2013© Diodes Incorporated BS870 Maximum Ratings (@TA = +25°C, unless othe

Page 3

BS870 Document number: DS11302 Rev. 18 - 2 3 of 5 www.diodes.com August 2013© Diodes Incorporated BS870 00.20.40.60.81.0012345V , DRAIN-SOUR

Page 4

BS870 Document number: DS11302 Rev. 18 - 2 4 of 5 www.diodes.com August 2013© Diodes Incorporated BS870 Package Outline Dimensions Please see A

Page 5

BS870 Document number: DS11302 Rev. 18 - 2 5 of 5 www.diodes.com August 2013© Diodes Incorporated BS870 IMPORTANT NOTICE DIODES INCORPORATED MA

Commentaires sur ces manuels

Pas de commentaire

Diodes BS870 Manuel d'utilisateur

Naviguer en ligne ou télécharger Manuel d'utilisateur pour Matériel Diodes BS870. Diodes BS870 User Manual Manuel d'utilisatio

Résumé du contenu

Commentaires sur ces manuels

Produits connexes et manuels pour Matériel Diodes BS870