Diodes BS250F Manuel d'utilisateur

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SOT23 P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 - JANUARY 1996
PARTMARKING DETAIL  MX
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
DS
-45 V
Continuous Drain Current at T
amb
=25°C I
D
-90 mA
Pulsed Drain Current I
DM
-1.6 A
Gate Source Voltage V
GS
± 20
V
Power Dissipation at T
amb
=25°C P
tot
330 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BV
DSS
-45 -70 V
I
D
=-100µA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
-1 -3.5 V I
D
=-1mA, V
DS
= V
GS
Gate-Body Leakage I
GSS
-20 nA V
GS
=-15V, V
DS
=0V
Zero Gate Voltage Drain
Current
I
DSS
-0.5.
µA
V
DS
=-25V, V
GS
=0V
Static Drain-Source On-State
Resistance (1)
R
DS(on)
914
V
GS
=-10V,I
D
=-200mA
Forward Transconductance
(1)(2)
g
fs
90 mS V
DS
=-10V,I
D
=-200mA
Input Capacitance (2) C
iss
25 pF V
DS
=-10V, V
GS
=0V,
f=1MHz
Turn-On Delay Time (2)(3) t
d(on)
10 ns
V
DD
-25V, I
D
=-200mA
Rise Time (2)(3) t
r
10 ns
Turn-Off Delay Time (2)(3) t
d(off)
10 ns
Fall Time (2)(3) t
f
10 ns
(1) Measured under pulsed conditions. Width=300
µs. Duty cycle 2% (2) Sample test.
(3) Switching times measured with 50
source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
BS250F
D
G
S
SOT23
3 - 55
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Résumé du contenu

Page 1 - MODE VERTICAL DMOS FET

SOT23 P-CHANNEL ENHANCEMENTMODE VERTICAL DMOS FETISSUE 3 - JANUARY 1996PARTMARKING DETAIL  MXABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrai

Page 2 - TYPICAL CHARACTERISTICS

BS250F3 - 57BS250FTYPICAL CHARACTERISTICSOutput Characteristics VDS - Drain Source Voltage (Volts) ID - Drain Current (Amps)-0.8-0.6-0.4 0-0.2-1.0Tr

Page 3

BS250F3 - 57BS250FTYPICAL CHARACTERISTICSOutput Characteristics VDS - Drain Source Voltage (Volts) ID - Drain Current (Amps)-0.8-0.6-0.4 0-0.2-1.0Tr

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