Diodes BCX38A/B/C Manuel de l'utilisateur

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NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTORS
ISSUE 1  MARCH 94
FEATURES
* 60 Volt V
CEO
* Gain of 10K at I
C
=0.5 Amp
*P
tot
=1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
80 V
Collector-Emitter Voltage V
CEO
60 V
Emitter-Base Voltage V
EBO
10 V
Peak Pulse Current I
CM
2A
Continuous Collector Current I
C
800 mA
Power Dissipation at T
amb
=25°C P
tot
1W
Operating and Storage Temperature Range T
j
:T
stg
-55 to +200 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
80 V
I
C
=10µA, I
E
=0
Collector-Emitter
Sustaining Voltage
V
CEO(sus)
60 V I
C
=10mA, I
B
=0
Emitter-Base
Breakdown Voltage
V
(BR)EBO
10 V
I
E
=10µA, I
C
=0
Collector Cut-Off
Current
I
CBO
100 nA V
CB
=60V, I
E
=0
Emitter Cut-Off
Current
I
EBO
100 nA V
EB
=8V, I
C
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
1.25 V I
C
=800mA, I
B
=8mA*
Base-Emitter
Turn-on Voltage
V
BE(on)
1.8 V I
C
=800mA, V
CE
=5V*
Static
Forward
Current
Transfer
Ratio
BCX38A h
FE
500
1000
I
C
=100mA, V
CE
=5V*
I
C
=500mA, V
CE
=5V*
BCX38B 2000
4000
I
C
=100mA, V
CE
=5V*
I
C
=500mA, V
CE
=5V*
BCX38C 5000
10000
I
C
=100mA, V
CE
=5V*
I
C
=500mA, V
CE
=5V*
E-Line
TO92 Compatible
C
B
E
BCX38A/B/C
3-20
BCX38A/B/C
0.0001
50
150
100
Pulse Width (seconds)
10 10010.10.010.001
0
D=1 (D.C.)
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
0.001 0.01 0.1 1
0.8
0.2
1.0
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
IC - Collector Current (Amps)
V
CE
(sa
t
)
-
(V
olts)
IC - Collector Current (Amps)
V
BE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
BE(on)
v I
C
V
B
E
- (V
olts)
V
BE
(
sa
t
)
- (V
olts)
0.4
0.001 0.01
0.1 1
0
1.0
0.8
0.6
0.4
0.2
1.6
1.4
1.2
IC - Collector Current (Amps)
h
FE
v I
C
h
FE
- Normalised Gain
10
1.0
0.5
2.0
1.5
V
CE
=5V
I
C
/I
B
=100
10
Safe Operating Area
IC - Collector Current (Amps)
VCE - Collector Voltage (Volts)
1100010 100
0.01
0.1
1
10
Single Pulse Test at T
amb
=25°C
D.C.
1s
100ms
10ms
1.0ms
0.1ms
0.6
0.001 0.01 0.1 1 10
I
C
/I
B
=100
1.0
0.5
2.0
1.5
0.001 0.01 0.1 1 10
V
CE
=5V
-55°C
+25°C
+100°C
+175°C
-55°C
+25°C
+100°C
+175°C
-55°C
+25°C
+100°C
-55°C
+25°C
+100°C
+175°C
Maximum transient thermal impedance
Thermal Resistance (°C/W)
3-21
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Résumé du contenu

Page 1 - BCX38A/B/C

NPN SILICON PLANAR MEDIUMPOWER DARLINGTON TRANSISTORSISSUE 1  MARCH 94FEATURES* 60 Volt VCEO* Gain of 10K at IC=0.5 Amp*Ptot=1 WattABSOLUTE MAXIMUM R

Page 2

NPN SILICON PLANAR MEDIUMPOWER DARLINGTON TRANSISTORSISSUE 1  MARCH 94FEATURES* 60 Volt VCEO* Gain of 10K at IC=0.5 Amp*Ptot=1 WattABSOLUTE MAXIMUM R

Page 3

BCX38A/B/C VCE- Collector-Emitter Voltage - (V)10 1001Maximum Power Dissipation - (W)0.80.60.40.21.0RS≤10kΩRS=47kΩRS=1MΩRS= ∞3-22The maximum permissab

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