Diodes BAV756DW Manuel d'utilisateur

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BAV756DW
Document number: DS30148 Rev. 9 - 2
1 of 3
www.diodes.com
April 2008
© Diodes Incorporated
BAV756D
W
QUAD SURFACE MOUNT SWITCHING DIODE ARRAY
Features
Fast Switching Speed
Ultra-Small Surface Mount Package
For General Purpose Switching Applications
High Conductance
One BAV70 Circuit and One BAW56 Circuit In One Package
Easily Connected As Full Wave Bridge
Lead Free/RoHS Compliant (Note 3)
"Green" Device (Notes 4 and 5)
Mechanical Data
Case: SOT-363
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Polarity: See Diagram
Marking Information: See Page 2
Ordering Information: See Page 2
Weight: 0.006 grams (approximate)
SOT-363
C
1
A
2
A
1
A
1
C
2
C
2
TOP VIEW
Internal Schematic
TOP VIEW
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Non-Repetitive Peak Reverse Voltage
V
RM
100 V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
75 V
RMS Reverse Voltage
V
R(RMS)
53 V
Forward Continuous Current (Notes 1 and 2)
I
FM
300 mA
Average Rectified Output Current (Notes 1 and 2)
I
O
150 mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0μs
@ t = 1.0s
I
FSM
2.0
1.0
A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Notes 1 and 2)
P
D
200 mW
Power Dissipation T
S
= 60°C (Note 2) P
D
300 mW
Thermal Resistance Junction to Ambient Air (Notes 1 and 2)
R
θ
JA
625
°C/W
Thermal Resistance Junction to Soldering Point (Note 2)
R
θ
JS
275
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-65 to +150
°C
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
Reverse Breakdown Voltage (Note 6)
V
(BR)R
75
V
I
R
= 2.5μA
Forward Voltage
V
F
0.715
0.855
1.0
1.25
V
I
F
= 1.0mA
I
F
= 10mA
I
F
= 50mA
I
F
= 150mA
Reverse Current (Note 6)
I
R
2.5
50
30
25
μA
μA
μA
nA
V
R
= 75V
V
R
= 75V, T
J
= 150°C
V
R
= 25V, T
J
= 150°C
V
R
= 20V
Total Capacitance
C
T
2.0 pF
V
R
= 0, f = 1.0MHz
Reverse Recovery Time
t
rr
4.0 ns
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
, R
L
= 100Ω
Notes: 1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at
http://www.diodes.com/datasheets/ap02001.pdf.
2. One or more diodes loaded.
3. No purposefully added lead.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb
2
O
3
Fire Retardants.
6. Short duration pulse test used to minimize self-heating effect.
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Résumé du contenu

Page 1 - BAV756DW

BAV756DW Document number: DS30148 Rev. 9 - 2 1 of 3 www.diodes.com April 2008© Diodes Incorporated BAV756DW QUAD SURFACE MOUNT SWITCHING DIODE ARRA

Page 2 - © Diodes Incorporated

BAV756DW 050100150200250250 50 75 100 125 150P, POWER DISSIPATION (mW)DT , AMBIENT TEMPERATURE ( C)A°Fig. 1 Power Derating Curve, Total Package300

Page 3

BAV756DW Package Outline Dimensions BAV756DW Document number: DS30148 Rev. 9 - 2 3 of 3 www.diodes.com April 2008© Diodes Incorporated

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