Diodes BAS116V Manuel d'utilisateur

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BAS116V
Document number: DS30562 Rev. 5 - 2
1 of 3
www.diodes.com
March 2008
© Diodes Incorporated
BAS116
V
SURFACE MOUNT LOW LEAKAGE DIODE
Features
Surface Mount Package Ideally Suited for Automated Insertion
Very Low Leakage Current
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 4 and 5)
Mechanical Data
Case: SOT-563
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Diagram
Terminals: Finish Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 2
Ordering Information: See Page 2
Weight: 0.003 grams (approximate)
TOP VIEW
BOTTOM VIEW
SOT-563
Internal Schematic
TOP VIEW
C
1
A
1
NC
NC
A
2
C
2
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
85 V
RMS Reverse Voltage
V
R(RMS)
60 V
Forward Continuous Current (Note 2)
I
FM
215 mA
Repetitive Peak Forward Current
I
FRM
500 mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0μs
@ t = 1.0ms
@ t = 1.0s
I
FSM
4.0
1.0
0.5
A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 2)
P
D
150 mW
Thermal Resistance Junction to Ambient Air (Note 2)
R
θ
JA
833
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-65 to +150
°C
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 3)
V
(BR)R
85
V
I
R
= 100μA
Forward Voltage
V
FM
0.90
1.0
1.1
1.25
V
I
F
= 1.0mA
I
F
= 10mA
I
F
= 50mA
I
F
= 150mA
Leakage Current (Note 3)
I
RM
5.0
80
nA
nA
V
R
= 75V
V
R
= 75V, T
J
= 150°C
Total Capacitance
C
T
2
pF
V
R
= 0, f = 1.0MHz
Reverse Recovery Time
t
rr
3.0
μs
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
, R
L
= 100Ω
Notes: 1. No purposefully added lead.
2. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. Short duration pulse test used to minimize self-heating effect.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb
2
O
3
Fire Retardants.
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Résumé du contenu

Page 1 - BAS116V

BAS116V Document number: DS30562 Rev. 5 - 2 1 of 3 www.diodes.com March 2008© Diodes Incorporated BAS116V SURFACE MOUNT LOW LEAKAGE DIODE Features

Page 2 - © Diodes Incorporated

BAS116V -50050100250200150501000T , AMBIENT TEMPERATURE ( C)Fig. 1 Power Derating Curve, Total PackageA°101.01001,0000.10.0101I, I2NSTANTANEOUS FOR

Page 3

BAS116V Package Outline Dimensions BAS116V Document number: DS30562 Rev. 5 - 2 3 of 3 www.diodes.com March 2008© Diodes Incorporated

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