Diodes 2N7002DWA Manuel d'utilisateur Page 2

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2N7002DWA
Document number: DS36120 Rev. 6 - 2
2 of 5
www.diodes.com
October 2013
© Diodes Incorporated
2N7002DWA
NEW PRODUCT
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
60 V
Gate-Source Voltage
V
GSS
±20 V
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
180
140
mA
Continuous Drain Current (Note 6) V
GS
=
5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
150
120
mA
Continuous Drain Current (Note 7) V
GS
=
10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
200
160
mA
Continuous Drain Current (Note 7) V
GS
=
5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
170
140
mA
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
I
DM
700 mA
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 6)
P
D
300 mW
Thermal Resistance, Junction to Ambient (Note 6)
R
JA
435 °C/W
Total Power Dissipation (Note 7)
P
D
400 mW
Thermal Resistance, Junction to Ambient (Note 7)
R
JA
330 °C/W
Thermal Resistance, Junction to Case (Note 7)
R
JC
139 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150 °C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
60
— V
V
GS
= 0V,
I
D
= 250µA
Zero Gate Voltage Drain Current
I
DSS
— —
1.0 µA
V
DS
= 60V,
V
GS
= 0V
Gate-Body Leakage
I
GSS
— —
±5 µA
V
GS
=
±20V,
V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS
(
th
)
0.8
2.5 V
V
DS
= V
GS
,
I
D
= 250µA
Static Drain-Source On-Resistance
R
DS(ON)
— —
8
V
GS
= 5.0V,
I
D
= 0.115A
— —
6
V
GS
= 10.0V,
I
D
= 0.115A
Forward Transconductance
g
FS
80
— mS
V
DS
= 10V,
I
D
= 0.115A
Diode Forward Voltage
V
SD
— 0.8 1.2 V
V
GS
= 0V, I
S
= 115mA
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
22.0 —
pF
V
DS
= 25V,
V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
3.2
Reverse Transfer Capacitance
C
rss
2.0
Gate Resistance
R
G
88
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge V
GS
= 10V Q
g
0.87
nC
V
GS
= 10V, V
DS
= 30V,
I
D
= 150mA
Total Gate Charge V
GS
= 4.5V Q
g
0.43
Gate-Source Charge
Q
g
s
0.11
Gate-Drain Charge
Q
g
d
0.11
Turn-On Delay Time
t
D
(
on
)
3.3
nS
V
DD
= 30V, I
D
= 0.115A,
V
GEN
= 10V
,
R
GEN
= 25
Turn-On Rise Time
t
r
3.2
Turn-Off Delay Time
t
D
(
off
)
12.0
Turn-Off Fall Time
t
f
6.3
Notes: 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
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