Diodes 2N7002 Manuel d'utilisateur

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2N7002
Document number: DS11303 Rev. 33 - 2
1 of 5
www.diodes.com
July 2013
© Diodes Incorporated
2N7002
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
max
I
D
max
T
A
= +25°C
60V
7.5 @ V
GS
= 5V
210mA
Description
This MOSFET has been designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Motor Control
Power Management Functions
Features
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Small Surface Mount Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Notes 3 & 4)
Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
Ordering Information (Note 5)
Part Number Compliance Case Packaging
2N7002-7-F Standard SOT23 3,000/Tape & Reel
2N7002-13-F Standard SOT23 10,000/Tape & Reel
2N7002Q-7-F Automotive SOT23 3,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Product manufactured with Date Code V12 (week 50, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V12 are built with Non-Green Molding Compound and may contain Halogens or Sb
2
O
3
Fire Retardants.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017
Code N P R S T U V W X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT23
Top View Equivalent Circuit
To
p
View
D
G
S
K72 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
= Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Shanghai A/T SiteChengdu A/T Site
Source
Gate
Drain
Y
M
Y
K72
YM
K72
YM
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Résumé du contenu

Page 1

2N7002 Document number: DS11303 Rev. 33 - 2 1 of 5 www.diodes.com July 2013© Diodes Incorporated 2N7002 N-CHANNEL ENHANCEMENT MODE MOSFET Product

Page 2

2N7002 Document number: DS11303 Rev. 33 - 2 2 of 5 www.diodes.com July 2013© Diodes Incorporated 2N7002 Maximum Ratings (@TA = +25°C, unless oth

Page 3 - © Diodes Incorporated

2N7002 Document number: DS11303 Rev. 33 - 2 3 of 5 www.diodes.com July 2013© Diodes Incorporated 2N7002 00.20.40.60.81.0012345V , DRAIN-SOURCE

Page 4

2N7002 Document number: DS11303 Rev. 33 - 2 4 of 5 www.diodes.com July 2013© Diodes Incorporated 2N7002 Package Outline Dimensions Please see A

Page 5

2N7002 Document number: DS11303 Rev. 33 - 2 5 of 5 www.diodes.com July 2013© Diodes Incorporated 2N7002 IMPORTANT NOTICE DIODES INCORPORATED

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