Diodes 2N7002 60V SOT23 Manuel d'utilisateur télécharger pdf (Page 2)

2N7002

Issue 5 - October 2007 2 www.zetex.com

Absolute maximum ratings

Electrical characteristics (at T

amb

= 25°C unless otherwise stated)

NOTES:

(a) Measured under pulsed conditions. Pulse width ⱕ300␮s; duty cycle ⱕ2%.

(b) Sample test.

Spice parameter data is available upon request for this device.

Parameter Symbol Limit Unit

Drain-source voltage V

60 V

Continuous drain current at T

amb

=25°C I

115 mA

Pulsed drain current I

800 mA

Gate-source voltage V

±40 V

Power dissipation at T

amb

=25°C P

tot

330 mW

Operating and storage temperature range T

, T

stg

-55 to +150 °C

Parameter Symbol Min. Max. Unit Conditions

Drain-source breakdown voltage BV

DSS

60 V I

= 10␮A, V

=0V

Gate-source threshold voltage V

GS(th)

12.5VI

= 250␮A, V

Gate-body leakage I

GSS

10 nA V

=±20V, V

=0V

Zero gate voltage drain current I

DSS

1 ␮AV

= 48V, V

=0V

500 ␮A

= 48V, V

=0V, T=125°C

On-state drain current

(a)

D(on)

500 mA V

= 25V, V

= 10V

Static drain-source on-state

voltage

(a)

DS(on)

3.75 V V

= 10V, I

= 500mA

375 mV V

= 5V, I

= 50mA

Static drain-source on-state

resistance

(a)

DS(on)

7.5 ⍀ V

= 10V, I

= 500mA

7.5 ⍀ V

= 5V, I

= 50mA

Forward transconductance

(a)(b)

80 mS V

= 25V, I

= 500mA

Input capacitance

(b)

iss

50 pF

= 25V, V

=0V f=1MHz

Common source output

capacitance

(b)

oss

25 pF

Reverse transfer capacitance

(b)

rss

5pF

Turn-on time

(b)(c)

(on)

20 ns V

≈30V, I

= 200mA,

=25⍀, R

=150⍀

Turn-off time

(b)(c)

(off)

20 ns

1 2 3 4

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Diodes 2N7002 60V SOT23 Manuel d'utilisateur Page 2

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